High thermoelectric performance of topological half-Heusler compound LaPtBi achieved by hydrostatic pressure

Abstract

<p>The thermoelectric figure of merit (<italic>ZT</italic>) in LaPtBi shows an overall increase with increasing hydrostatic pressure.</p>

First-principles calculations to investigate mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP

“…9 (a). This shows a T -1 behavior of kL with temperature, which is due to the Umklapp phononphonon scattering process [80]. According to the Wiedemann-Franz law, the thermal conductivity (κ = κe +κl) is the sum of electronic thermal conductivity (κe = LσT = neµLT) and lattice thermal conductivity (κL).…”

“…These problems arose due to the huge dependence on fossil fuels. To solve these problems it is especially important to exploit new energy conversion techniques which have high efficiency, and are also green and eco-friendly [1]. Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution [2].…”

Rhodium-based half-Heusler alloys as thermoelectric materials

“…Many other experimentally and theoretically identified hH alloys show interesting TE properties. [32][33][34][35][36][37][38][39][40][41][42][43] Although doping has been the most widely used method to improve the ZT and power factor of hH alloys, the application of pressure has also been shown to be fruitful in improving the TE properties. 41,44,45 At present, it is well known that hH alloys are excellent candidates for use in TE devices.…”

Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials

“…Many other experimentally and theoretically identified hH alloys show interesting TE properties. [28][29][30][31][32][33][34][35][36][37][38][39] Although doping has been the most widely used method to improve ZT and power factor of hH alloys, application of pressure has also been shown to be fruitful in improving the TE properties. 37,40 At present, it is well known that hH alloys are excellent candidates for use in TE devices, but some of them require expensive dopants to simultaneously tune the carrier concentration and suppress the lattice thermal conductivity.…”

“…[28][29][30][31][32][33][34][35][36][37][38][39] Although doping has been the most widely used method to improve ZT and power factor of hH alloys, application of pressure has also been shown to be fruitful in improving the TE properties. 37,40 At present, it is well known that hH alloys are excellent candidates for use in TE devices, but some of them require expensive dopants to simultaneously tune the carrier concentration and suppress the lattice thermal conductivity. Therefore, further research is required to identify efficient, non-toxic, low-cost, and naturally abundant multifunctional materials.…”