High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

Fochuk, P.; Nakonechnyi, I.; Kopach, O.; Verzhak, Ye.; Panchuk, O.; Komar, V. K.; Terzin, Igor S.; Kutnij, Vladimir; Rybka, A.; Nykoniuk, Yevhen; Bolotnikov, A. E.; Camarda, G.C.; Cui, Yonggang; Hossain, Anwar; Kim, K. H.; Yang, Ge; James, R. B.

doi:10.1117/12.929035

Cited by 6 publications

(6 citation statements)

References 10 publications

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“…In contrast, it is not straightforward to obtain a high resistivity in the order of 10 9 Ω·cm for CZT and MAPbI 3 crystals without delicate control of the growth conditions and composition of starting materials. [ 11b,43 ]…”

Section: Resultsmentioning

confidence: 99%

Inorganic Halide Perovskitoid TlPbI₃ for Ionizing Radiation Detection

Lin

McCall

et al. 2021

Adv Funct Materials

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Room temperature semiconductor detector (RTSD) materials for γ‐ray and X‐ray radiation are in great demand for the nonproliferation of nuclear materials as well as for biomedical imaging applications. Halide perovskites have attracted great attention as emerging and promising RTSD materials. In this contribution, the material synthesis, purification, crystal growth, crystal structure, photoluminescence properties, ionizing radiation detection performance, and electronic structure of the inorganic halide perovskitoid compound TlPbI3 are reported on. This compound crystallizes in the ABX3 non‐perovskite crystal structure with a high density of d = 6.488 g·cm–3, has a wide bandgap of 2.25 eV, and melts congruently at a low temperature of 360 °C without phase transitions, which allows for facile growth of high quality crystals with few thermally‐activated defects. High‐quality TlPbI3 single crystals of centimeter‐size are grown using the vertical Bridgman method using purified raw materials. A high electrical resistivity of ≈1012 Ω·cm is readily obtainable, and detectors made of TlPbI3 single crystals are highly photoresponsive to Ag Kα X‐rays (22.4 keV), and detects 122 keV γ‐rays from 57Co radiation source. The electron mobility‐lifetime product µeτe was estimated at 1.8 × 10–5 cm2·V–1. A high relative static dielectric constant of 35.0 indicates strong capability in screening carrier scattering and charged defects in TlPbI3.

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Section: Resultsmentioning

confidence: 99%

Inorganic Halide Perovskitoid TlPbI₃ for Ionizing Radiation Detection

Lin

McCall

et al. 2021

Adv Funct Materials

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“…It is important to point out that thus high resistivity can be easily obtained without delicate control on growth conditions, extensive purification of starting materials, or intentional doping. In contrast, it is not straightforward to obtain a high resistivity 10 10 Ω·cm for CZT crystals without doping and careful control on the melt composition Figure b shows the spontaneous and sensitive photoresponse of the detector against a Ag Kα (22.4 keV) X-ray source at an applied bias of 100 V by switching the Ag X-ray source ON and OFF.…”

Section: Resultsmentioning

confidence: 99%

Cu₂I₂Se₆: A Metal–Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature

et al. 2018

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CuISe is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. CuISe crystallizes in the rhombohedral R3̅m space group with a density of d = 5.287 g·cm and a wide bandgap E of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass m* of 0.32. The congruently melting compound was grown in centimeter-size CuISe single crystals using a vertical Bridgman method. A high electric resistivity of ∼10 Ω·cm is readily achieved, and detectors made of CuISe single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ∼46 cm·V·s. This value is comparable to that of one of the leading γ-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.

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“…From their base we prepared rectangular shaped samples. High-temperature Hall effect measurements were carried out under two-temperature annealing conditions on samples placed in an evacuated ampoule in twozone furnace, where the first zone governed the temperature of the sample, and the second controlled the temperature and pressure of the Cd vapor [14][15].…”

Section: Methodsmentioning

confidence: 99%

Compensation mechanism of bromine dopants in cadmium telluride single crystals

Gorichok

Fochuk

Verzhak

et al. 2015

Journal of Crystal Growth

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We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (P Cd = 10 2-10 5 Pa) at 800-1100 K, and investigated their electrical properties at high-and low-temperature. The influence of impurities on 2 Cd) 0. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

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High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

Cited by 6 publications

References 10 publications

Inorganic Halide Perovskitoid TlPbI₃ for Ionizing Radiation Detection

Inorganic Halide Perovskitoid TlPbI₃ for Ionizing Radiation Detection

Cu₂I₂Se₆: A Metal–Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature

Compensation mechanism of bromine dopants in cadmium telluride single crystals

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High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

Cited by 6 publications

References 10 publications

Inorganic Halide Perovskitoid TlPbI3 for Ionizing Radiation Detection

Inorganic Halide Perovskitoid TlPbI3 for Ionizing Radiation Detection

Cu2I2Se6: A Metal–Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature

Compensation mechanism of bromine dopants in cadmium telluride single crystals

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Inorganic Halide Perovskitoid TlPbI₃ for Ionizing Radiation Detection

Inorganic Halide Perovskitoid TlPbI₃ for Ionizing Radiation Detection

Cu₂I₂Se₆: A Metal–Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature