2020
DOI: 10.1038/s41467-020-18005-7
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High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

Abstract: To reduce the ever-increasing energy consumption in datacenters, one of the effective approaches is to increase the ambient temperature, thus lowering the energy consumed in the cooling systems. However, this entails more stringent requirements for the reliability and durability of the optoelectronic components. Herein, we fabricate and demonstrate silicon-polymer hybrid modulators which support ultra-fast single-lane data rates up to 200 gigabits per second, and meanwhile feature excellent reliability with an… Show more

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Cited by 105 publications
(50 citation statements)
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“…When the BER is below the FEC threshold, commonly adopted codes can be applied to the data signals to dramatically enhance the BER, leading to an efficiency of 96.8%, thereby enabling a variety of potential practical applications. [41][42][43] As shown in Figure 4b, the BER was invariant to the received powers ranging from 80 to 240 µW at a rate of 1 Gbps. For data rates running from 5 to 9 Gbps, the BER improved with the enhanced signal power, as anticipated.…”
Section: Resultsmentioning
confidence: 88%
“…When the BER is below the FEC threshold, commonly adopted codes can be applied to the data signals to dramatically enhance the BER, leading to an efficiency of 96.8%, thereby enabling a variety of potential practical applications. [41][42][43] As shown in Figure 4b, the BER was invariant to the received powers ranging from 80 to 240 µW at a rate of 1 Gbps. For data rates running from 5 to 9 Gbps, the BER improved with the enhanced signal power, as anticipated.…”
Section: Resultsmentioning
confidence: 88%
“…Despite their performance limitations, these all-silicon devices can be fabricated under the CMOS process, which provides a prerequisite for large-scale practical applications. In addition, more and more silicon-based hybrid modulators have been developed recently, such as silicon-based lithium niobate (LN) modulators, silicon-based polymer modulators, and silicon-based graphene modulators [ 16 , 17 , 18 ]. These modulators rely on electro-optical (EO) effect of new materials and generally exhibit excellent performance, such as high bandwidth, high modulation efficiency, and extremely small footprint, but the manufacturing process is complex and is not compatible with the CMOS fabrication process.…”
Section: Introductionmentioning
confidence: 99%
“…Polymeric waveguide devices have been investigated since the development of high-speed modulators with electro-optic polymers 21 – 23 . Recently, fluorinated polymer materials with low optical loss have been developed for producing various photonic devices useful in optical communications and optical sensors, owing to their magnificent refractive index tuning capability 24 32 .…”
Section: Introductionmentioning
confidence: 99%