volume 135, issue 2, P145-149 2006
DOI: 10.1016/j.mseb.2006.08.050
View full text
|
Sign up to set email alerts
|
Share

Abstract: Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.

Search citation statements

Order By: Relevance

Citation Types

0
4
0

Paper Sections

0
0
0
0
0

Publication Types

0
0
0
0

Relationship

0
0

Authors

Journals