High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Fleury, Clément; Capriotti, Mattia; Rigato, Matteo; Hilt, Oliver; Würfl, Joachim; Derluyn, Joff; Steinhauer, Stephan; Köck, Anton; Strasser, G.; Pogány, D.

doi:10.1016/j.microrel.2015.06.010

Cited by 30 publications

(9 citation statements)

References 24 publications

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“…High temperature performance and reliability of GaN HEMTs, particularly industrial devices, have only recently been investigated due to the challenges in developing hightemperature packages [244]. An initial study of experimental non-recessed GaN GITs was performed in [291] up to 420 o C for four different buffer designs. V TH in all four device designs was found to have a similar negative temperature coefficient, which resulted in a normally-on behavior for a speicific buffer at 420 o C. R DS,ON was found to increase with temperature, due to the high temperature degradation of 2DEG mobility and contact resistance.…”

Section: B Elevated Temperature Performance and Reliabilitymentioning

confidence: 99%

“…As for device reliability, V DS step-stress testing of the R&D GaN HEMTs in [291] up to breakdown showed a decrease in the observed V DS failure voltage from 380 V at room temperature to 160 V at 420 o C, which was attributed to vertical leakage through the epitaxial stack. A high temperature robustness test in nitrogen gas of SP-HEMTs in [292] found that V TH remained stable over 20 days of exposure, while R DS,ON and saturation current were found to degrade depending upon the presence of bonding pads, indicating the determining role of packaging in device reliability at high temperature extremes.…”

Section: B Elevated Temperature Performance and Reliabilitymentioning

confidence: 99%

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: B Elevated Temperature Performance and Reliabilitymentioning

confidence: 99%

Section: B Elevated Temperature Performance and Reliabilitymentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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“…One of the most important applications of gallium nitride (GaN) and aluminum nitride (AlN), as well as their ternary alloys, Al x Ga 1−x N, is a high electron mobility transistor (HEMT) [ 1 , 2 ]. Its epitaxial structure (GaN/AlGaN) is mainly crystallized on a foreign semi-insulating (SI) substrate as silicon carbide (SiC) or silicon (Si) [ 3 ]. Such a structure demonstrates a high threading dislocation density (TDD) due to a relaxation process of the nitride layers on a foreign wafer of different lattice parameters [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

et al. 2022

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Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals.

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“…Another advantage of using a SiC substrate is its lower lattice mismatch of ~3% for GaN (that of Si is ~17%). Owing to the high material properties of gallian nitride and the SiC substrate, these devices are expected to operate in high-temperature environments [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

et al. 2021

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Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate.

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High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Cited by 30 publications

References 24 publications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

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