Abstract:This paper analyses the thermally-activated failure mechanisms of GaN LED test-structures related with
the presence of a hydrogen rich SiN passivation layer, by comparing the electrical and optical behaviour
of samples with and without passivation during thermal stress. The analysis was carried out by means
of electroluminescence, cathodoluminescence, emission microscopy and current–voltage measurements.
Thermal treatment induced degradation only on the samples with passivation: identified degradation
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