HIGH-DENSITY static memories with extremely low power dissipation can be realized with the I2 L/MTL technology, since it offers a very compact device structure and an almost ideal nonlinear load device with a large impedance range; typically 10' -lO*a 1-4. A 16Kb chip based on the Injector-Sensed (IS) Cell (Figure l a ) has been described earlier4. The sense signal AVBL of the IS-cell is equal to the difference AVI,~ of the injector diode voltages, which is only about 25mV at low currents, and it decreases as…
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