High-Speed InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

Tossoun, Bassem; Stephens, Robert D.; Wang, Ye; Addamane, Sadhvikas; Balakrishnan, Ganesh; Holmes, A. L.; Beling, Andreas

doi:10.1109/lpt.2018.2793663

Cited by 14 publications

(12 citation statements)

References 9 publications

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“…[7,51] This also depresses the random transport of the photogenerated carriers and therefore inhibits the undesired 1/f noise and generation-recombination noise. In addition, the GaTe/InSe vdW heterostructure photodetectors have an excellent R i value at SWIR under an ultra-low incident illumination (Figures 4b and 4c), which is comparable to that reported on the traditional semiconductors, such as the HgCdTe, [6] InAs/GaSb type-II superlattices, [6] InGaAs/GaAsSb type-II quantum wells, [52] waveguide integrated Ge p−i−n photodetectors [53] and InGaAs diode, [1,54] and the emerging graphene-based SWIR photodetectors (Table S1, Supporting Information). Therefore, a low noise together with the excellent photoresponse enables this 2D GaTe/InSe vdW heterojunction device to achieve an ultra-high specific detectivity D*.…”

Section: Resultssupporting

confidence: 66%

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Gong

et al. 2019

Adv Funct Materials

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InSe (bandgap of ~1.20 to 1.80 eV depended on thickness reduction from bulk to monolayer). Specifically, the uncooled SWIR detectivity is up to ~10 14 Jones at 1064 nm and ~10 12 Jones at 1550 nm, respectively. This result indicates that the 2DLMs vdW heterostructures with type-II band alignment produce an interlayer exciton transition, and this adventage can offer a viable strategy for devising high-performance optoelectronics in SWIR or even longer wavelengths beyond the individual limitations of the bandgaps and heteroepitaxy of the constituent atomic layers.

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Section: Resultssupporting

confidence: 66%

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Gong

et al. 2019

Adv Funct Materials

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“…The extracted 3 dB bandwidth is 40 GHz at V = −0.2 V. (c) The capacitance of the CNT photodetector extracted from the S 11 parameter. (d) Benchmarking of the 3 dB bandwidth of state-of-the-art high-speed photodetectors at the 2 μm band based on different materials, including silicon, group III–V systems (InGaAs, − InGaAs/GaAsSb, − GaInAsSb), group IV systems (GeSn − ), and two-dimensional materials (graphene, BP, and Te).…”

Section: Resultsmentioning

confidence: 99%

High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

Wang

Cai

et al. 2023

ACS Nano

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In the era of big data, the growing demand for data transmission capacity requires the communication band to expand from the traditional optical communication windows (∼1.3–1.6 μm) to the 2 μm band (1.8–2.1 μm). However, the largest bandwidth (∼30 GHz) of the current high-speed photodetectors for the 2 μm window is considerably less than the developed 1.55 μm band photodetectors based on III–V materials or germanium (>100 GHz). Here, we demonstrate a high-performance carbon nanotube (CNT) photodetector that can operate in both the 2 and 1.55 μm wavelength bands based on high-density CNT arrays on a quartz substrate. The CNT photodetector exhibits a high responsivity of 0.62 A/W and a large 3 dB bandwidth of 40 GHz (setup-limited) at 2 μm. The bandwidth is larger than that of existing photodetectors working in this wavelength range. Moreover, the CNT photodetector operating at 1.55 μm exhibits a setup-limited 3 dB bandwidth over 67 GHz at zero bias. Our work indicates that CNT photodetectors with high performance and low cost have great potential for future high-speed optical communication at both the 2 and 1.55 μm bands.

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“…The principal challenges are related to minimizing the electronic noise and maximizing the gain of the detector maintaining high transmission rates [8,9]. To do the aforementioned, novel materials and electrical designs are required.…”

Section: Challenges and Trendsmentioning

confidence: 99%

Free-Space-Optical Quantum Key Distribution Systems: Challenges and Trends

López-Leyva¹,

Talamantes-Álvarez²,

Ponce-Camacho³

et al. 2019

Quantum Cryptography in Advanced Networks

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Nowadays, high security levels are required to transmit critical information for government, private and personal sectors. As a countermeasure, the Quantum Key Distribution systems are the best option in order to protect this information because it provides unconditional security. In addition, increasing the transmission distance is a highlight. Therefore, the Free-Space Optical Quantum Key Distribution systems (FSO-QKD) present an innovative way for sharing secure information between two parties located at ground stations, spacecraft or aircraft. However, these scenarios present several challenges regarding the hardware, protocols and techniques used that must be solved in order to enhance the performance parameters (security level, distance link, final secret key rate, among others) for any QKD system; although, in particular, a high transmission performance is required for both the classical and quantum channels. These issues impose the roadmap and trends in the research, academic and manufacturing sectors around the world.

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High-Speed InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

Cited by 14 publications

References 9 publications

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

Free-Space-Optical Quantum Key Distribution Systems: Challenges and Trends

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