High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

Ma, Yiming; Dong, Bowei; Wei, Jingxuan; Chang, Yuhua; Huang, Li; Ang, Kah‐Wee; Lee, Chengkuo

doi:10.1002/adom.202000337

Cited by 91 publications

(74 citation statements)

References 59 publications

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“…In many TMDC or BP phototransistors, there existed some structural defects and thus some trap states at the band tails were introduced. Such devices usually have photoresponses dominated by the PG effect 43,[66][67][68][69] . On the other hand, in some phototransistors with lightly doped TMDC or BP, the PC effect 43,70 or the PV effect in the PC mode 67,71,72 happens, similar to their graphene counterparts.…”

Section: Device Configurations Of 2dm Pdsmentioning

confidence: 99%

“…For the M-TMDC-M and M-BP-M PDs based on the PC or PV effects, the responsivities are similar while the bandwidths are small when compared to M-G-M PDs. For those PDs based on the PG effect, the responsivities can be up tõ 10 A W −1 in cost of small bandwidths 69 . Currently, the 2DM-heterostructure configuration was recognized as one of the most promising options because the device responsivity are comparable to that of the metal-2DM-metal PDs (~10-10 2 mA W −1 ), meanwhile the noise can be suppressed greatly with the help of the junction structures 89,90,98,99,122,123 .…”

Section: Summary For Waveguide-integrated 2dm Pds On Siliconmentioning

confidence: 99%

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Silicon/2D-material photodetectors: from near-infrared to mid-infrared

et al. 2021

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Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

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Section: Device Configurations Of 2dm Pdsmentioning

confidence: 99%

Section: Summary For Waveguide-integrated 2dm Pds On Siliconmentioning

confidence: 99%

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

et al. 2021

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“…To maintain high responsivity BP‐based photodetectors, a PhCW was utilized to enhance light‐matter interaction length, as shown in Figure 10c. [ 34 ] With the help of PhCW, BP photodetectors can be realized in high‐performance on‐chip MIR systems and further utilized in widespread applications.…”

Section: D Material‐based Photodetectorsmentioning

confidence: 99%

2D Materials Enabled Next‐Generation Integrated Optoelectronics: from Fabrication to Applications

et al. 2021

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2D materials, such as graphene, black phosphorous and transition metal dichalcogenides, have gained persistent attention in the past few years thanks to their unique properties for optoelectronics. More importantly, introducing 2D materials into silicon photonic devices will greatly promote the performance of optoelectronic devices, including improvement of response speed, reduction of energy consumption, and simplification of fabrication process. Moreover, 2D materials meet the requirements of complementary metal‐oxide‐semiconductor compatible silicon photonic manufacturing. A comprehensive overview and evaluation of state‐of‐the‐art 2D photonic integrated devices for telecommunication applications is provided, including light sources, optical modulators, and photodetectors. Optimized by unique structures such as photonic crystal waveguide, slot waveguide, and microring resonator, these 2D material‐based photonic devices can be further improved in light‐matter interactions, providing a powerful design for silicon photonic integrated circuits.

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“…[ 234 ] Ascribed to the miniband, the detecting range of BP devices might be expanded up to mid‐infrared part. [ 235 ] 2D semiconductors can be stacked on other materials through van der Waals interaction with minimizing the surface defects since no lattice matching needed. Jarillo‐Herrero's group transferred ambipolar bilayer MoTe 2 flake dual‐gate FET based PN junction on silicon photonic‐crystal (PhC) waveguide and demonstrated the application for phonic integration (Figure 4f).…”

Section: Ambipolar 2d Semiconductors For Pn Junctionsmentioning

confidence: 99%

Ambipolar 2D Semiconductors and Emerging Device Applications

Sheng

Hou

et al. 2020

Small Methods

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the emergence of nanoscience and technology. Reviewing the history over the past 60 years, new devices based on new materials and new physics have been driving the development of integration circuits (ICs) along the Moore's law. Therefore, it has always been a frontier to explore new materials and novel physical properties that can help to push forward the development of ICs. In addition, currently, the multiple requirements for ICs are becoming increasingly important, such as flexible, transparent, and wearable. Just in this context, graphene, an ultrathin graphitic layer with a honeycomb structure, has aroused a wide attention since its discovery, which was demonstrated as a metallic transistor and proposed for high-frequency electronic circuits. [1] Due to its outstanding electronic, optical and mechanical properties, graphene was highly expected as a material to meet the increasing requirements for high-performance flexible, transparent and wearable electronic and optoelectronic devices. [2-8] The emergence of graphene inspired researchers to look for other 2D materials from van der Waals solids (VDWSs) since the one-atomic-layer graphene was revealed to be thermodynamically stable under ambient conditions. Up to now, 2D atomic crystals have been found in various VDWSs like hexagonal boron nitride (hBN), black phosphorus (BP), metal dichalcogenides (MDCs, like MoS 2 , WSe 2 , MoTe 2 , SnS 2 , and so on), and layered oxide, the basic of which can be seen in hundreds of reviews. [9-16] These graphene-like 2D materials are the thinnest crystals with the thickness usually less than 1 nm. They often exhibit distinctive properties different from conventional bulk materials. For example, bulk MoS 2 is of indirect bandgap but the monolayer is of direct one; [17,18] the bandgap of few layer semiconducting 2D layers often increases with the thickness decreasing, and can be modulated by electric field; [19-23] theoretical calculations indicate that the sunlight absorptivity of MDC monolayers like MoS 2 , MoSe 2 , and WS 2 is up to 5-10% that is 1 order higher than Si and GaAs, enabling them promising for ultrathin optoelectronic devices. [24] Besides, the 2D family covers a wide conductive range from metals, semimetals, semiconductors to insulators, offering a possibility to construct ultrathin devices totally based on 2D crystals. [25-27] And, as the study continues With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, lightemitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrate...

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High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

Cited by 91 publications

References 59 publications

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

2D Materials Enabled Next‐Generation Integrated Optoelectronics: from Fabrication to Applications

Ambipolar 2D Semiconductors and Emerging Device Applications

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