High Resolution Reconfigurable Phase-Tuning Line Using Self-Shielded 3-D Interdigital Capacitor

Deng, Zhixian; Zhou, Jie; Qian, Huizhen Jenny; Luo, Xun

doi:10.1109/lmwc.2020.2990062

Cited by 12 publications

(9 citation statements)

References 15 publications

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“…Changing the number of fingers and spacing can result in different coupling capacitance of the interdigital capacitors. [ 32 ] Moreover, the sensitivity is proportional to the C SG ‐to‐ C RG ratio. Because the interdigital capacitance is buried in the wafer, which is not directly measurable, a coupling ratio must be introduced as indirect measurements of parasitic capacitance.…”

Section: Resultsmentioning

confidence: 99%

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

Tan

Hsu

Shen

et al. 2021

Adv Funct Materials

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A 2D SnSe 2 layered film-based gas detector incorporating a floating-gate device coupled with metal interconnect wiring structures is proposed and demonstrated for the first time. Linear amplification can be readily implemented using a coupling ratio design, which refers to the capacitance ratio between the gate and device in the sense amplifier circuits. A sensitivity of 102 mV ppm −1 can be obtained using the 2D SnSe 2 layered film with a thickness of 10 nm. The 2D SnSe 2 layered film-based complementary metal-oxidesemiconductor (CMOS) gas detector features highly sensitive, wide, and adjustable dynamic ranges with a real-time response of the sub-ppm detection limit on NO 2 gas. In addition, the synthesis process of the SnSe 2 layered film can occur at a low temperature and be operated at room temperature. Furthermore, 3 × 3 gas detector arrays with peripheral circuits demonstrate the functionality of multiple gas detection simultaneously and 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated, providing the spatial distribution of the gas concentration in a specific region. The performance of the proposed detector is comparable to that of the other state-of-the-art gas sensors.

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Section: Resultsmentioning

confidence: 99%

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

Tan

Hsu

Shen

et al. 2021

Adv Funct Materials

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“…12(a) and (b), the NF and gain of the proposed LNA is varied with the inductance of L s1 and L s2 . In the proposed LNA, the performance degeneration caused by the PVT variation can be calibrated by the phase-tuning lines [34] in the inter-stage matching networks of both paths, and the detailed discussion is given in Appendix A.…”

Section: Methodsmentioning

confidence: 99%

A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

Deng

Zhou

Qian

et al. 2021

IEEE J. Solid-State Circuits

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In this article, a 22.9-38.2-GHz dual-path noisecanceling low noise amplifier (LNA) is proposed, which can achieve a low noise figure (NF) by reducing the noise of both paths. Such LNA consists of one common gate (CG) amplifier with one three-stage transformer, one resistive feedback common-source (CS) amplifier, and two amplitude-adjusting amplifiers. The three-stage transformer is used in the CG amplifier to provide gain-boosting, noise-reducing, and wideband inter-stage matching operation, simultaneously. Meanwhile, amplitude-adjusting amplifiers with reconfigurable phase-tuning lines are utilized in both paths to optimize the noise-canceling performance. To verify the aforementioned principle, a dualpath noise-canceling LNA is implemented and fabricated using a conventional 28-nm CMOS technology. The proposed LNA consumed 18.9 mW under a 0.9-V supply. The measured NF is 2.65-4.62 dB within the operating frequency range of 22.9-38.2 GHz, while the peak gain is 14.5 dB. The in-band input 1-dB compression point (IP 1 dB ) and input third-order intercept point (IIP3) are −13.2 to −6.6 and −3.6 to 3.2 dBm, respectively.

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“…The wideband input matching is mainly achieved by the common-gate (CG) stage with inductor L gs , while a dc-block capacitor is used in the input of CS stage. Meanwhile, the [28] are introduced in the proposed LNA to calibrate the phase variation caused by process, voltage, and temperature (PVT) issues, which improves the noise-canceling The of both paths is to an optimized output transformer with high common-mode rejection ratio, and such a transformer can not only reduce the common-mode noise but also provide the wideband impedance matching between the LNA and the mixer. Measured conversion gain, NF, and IIP3 versus IF frequency ( f RF = 28 GHz and f LO is varied from 14 to 24 GHz for IF frequency from 14 to 4 GHz).…”

Section: B Dual-path Noise-canceling Lnamentioning

confidence: 99%

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

Deng

Qian

Luo

2022

IEEE J. Solid-State Circuits

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This article presents a 22.6-39.2-GHz reflectionless receiver (RX) capable of reducing the in-band intermodulation and high-order mixing products. Such RX consists of an absorptive IF amplifier, a double-balance passive mixer, and a dualpath noise-canceling low noise amplifier (LNA). The absorptive IF amplifier is utilized to suppress the out-of-band signal reflected back to mixer, which can reduce the intermodulation and high-order mixing products caused by the remixing of the outof-band signals. Meanwhile, the dual-path noise-canceling LNA is used for achieving low noise figure (NF) in a wide frequency range. To verify the aforementioned principle, a reflectionless RX is implemented and fabricated using a conventional 28-nm CMOS technology. The measurement shows the minimum NF of 3.6 dB and the peak input third-order intercept point (IIP3) of −11.7 dBm. Besides, the proposed RX can support multi-Gb/s, 256-quadratic amplitude modulation (QAM)/1024-QAM modulation signals.

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High Resolution Reconfigurable Phase-Tuning Line Using Self-Shielded 3-D Interdigital Capacitor

Cited by 12 publications

References 15 publications

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

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