2010
DOI: 10.1016/j.elecom.2010.03.026
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High resolution LAPS and SPIM

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Cited by 54 publications
(76 citation statements)
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“…The detailed set-up is shown in Figure S2 and was previously shown to have a resolution of 0.8 µm [17]. A schematic of the photocurrent curves recorded is shown in Figure 2b. …”
Section: Spim Measurementsmentioning
confidence: 99%
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“…The detailed set-up is shown in Figure S2 and was previously shown to have a resolution of 0.8 µm [17]. A schematic of the photocurrent curves recorded is shown in Figure 2b. …”
Section: Spim Measurementsmentioning
confidence: 99%
“…Submicrometre resolution for SPIM and LAPS has been achieved using silicon on sapphire (SOS, 0.5 µm silicon, 475 µm sapphire) as the semiconductor substrate and photoexcitation of charge carriers using a two photon-effect in the thin silicon layer by employing a femtosecond laser (1250 nm) with photon energy smaller than the bandgap of silicon [17]. By replacing the traditional insulator with a selfassembled organic monolayer that was bound to hydrogen-terminated silicon on the SOS substrate, we have significantly increased the sensitivity of SPIM and the measurement accuracy of LAPS recently [15,16].…”
Section: Introductionmentioning
confidence: 99%
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“…The setup for LAPS and SPIM measurements was described previously [17]. A diode laser LD1539 (Laser 2000, λ= 405 nm, 1 mW) was used for photocurrent excitation.…”
Section: Laps Measurementsmentioning
confidence: 99%
“…Using an optimized laser scanning setup in conjunction with a silicon-onsapphire (SOS) substrate (Figure 1), 1.5 µm spatial resolution was obtained using visible light with a wavelength of 405 nm, and 0.8 µm resolution was achieved using light with energy smaller than the bandgap exciting a two-photon effect in silicon [17,18]. To improve the sensitivity of the LAPS surface, the traditional insulator was replaced with a 1,8-nonadiyne monolayer that was bound to hydrogen terminated silicon on SOS [19,20].…”
Section: Introductionmentioning
confidence: 99%