High resolution ion scattering study of silicon oxynitridation

Abstract

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Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films

“…Although we cannot say how they act separately, it is obvious that the interface in the as-deposited films becomes more perfect. It has been established that nitrogen in the interfacial region saturates Si 2 =Si : and Si 3 Si_ dangling bonds [19] and replaces the weak strained Si-O and Si-H bonds by forming rigid Si-N bonds [23,24]. As a result, the density of D it decreases, as it is well demonstrated in our case in Fig.…”

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”

Core-Level Shifts in Si(001)-SiO2 Systems: The Value of First-Principle Investigations

“…However, a H concentration of the same order as the N concentration, i.e. of about one monolayer [25,30,31]' appears unlikely at such interfaces.…”

“…We attribute this shift to a chemical change in the second nearest neighbors. In the neighborhood of the substrate the enviroment around a N-Sh center is assumed to be predominantly rich in Si and N atoms [25,30,31], whereas an O-rich environment is expected in the oxide. For simulating such environments we studied auxiliary test-molecules in which the central N atom was always kept in a N-Si 3 configuration, while changes in second nearest neighbors were investigated [8].…”