High-resolution image patterned silicon wafer with inverted pyramid micro-structure arrays for decorative solar cells

Ding, Ke; Zhang, M.; Mei, Jie; Xiao, Pan; Zhang, X.W.; Wu, Di; zhang, Xuanming; Jie, Jiansheng

doi:10.1016/j.mtener.2020.100493

Cited by 6 publications

(3 citation statements)

References 31 publications

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“…Wet etching is an essential device manufacturing technique that complements dry etching. [ 24 ] In general, dry etching techniques can be extremely anisotropic, which is a desired characteristic for the fabrication of vertical profiles. [ 25 ] Dry etching, however, has a low etch‐selectivity between materials due to its strong physical component, and ion bombardment can induce surface damage or hydrogen contamination on the nitride materials.…”

Section: Introductionmentioning

confidence: 99%

Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Huang,

Wu,

Lin

et al. 2023

Adv Funct Materials

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Nitride materials for memristors are benefited from their high response speed and high power density. The memristive effects on 1D nitride structures has not yet been elucidated. Hence, the activation of the memristive capability of nanowire (NW)‐based nitride memristors using an uncomplicated fabrication as single‐step anisotropic wet etching is proposed. Among nitrides, gallium nitride, a third‐generation semiconductor, exhibits properties potentially suitable for neuromorphic applications. The wet etchant considerably alters the chemisorbed molecules and dangling bonds associated with the surface states of the nanowires. A device based on such NWs which exhibits low power consumption with no required compliance current and forming voltage for operation is demonstrated. It can integrate all memristive capabilities, including multiple state switching, nonvolatile bipolar memory, and Ca2+ dynamics‐imitating synaptic actions. The examination of the memristive process also highlights the significance of altering surfaces in the devices, in addition to the shared principles that underlie biological and artificial synapses. The operating mode of the nitride‐nanowire devices can be controlled by controlling the formation/dissolution of the oxygen‐conductive path along the nanowires. Thus, the study realizes nanowire memristors based on a nitride material framework, that is promising for application in the 1D–1D system downsizing required for the bio‐inspired artificial synapse.

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Section: Introductionmentioning

confidence: 99%

Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Huang,

Wu,

Lin

et al. 2023

Adv Funct Materials

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“…Wet chemical etching is an essential step for processing silicon (Si) wafers since the birth of the semiconductor industry in 1948 and also plays a pivotal role in semiconductor device manufacturing. − Nevertheless, tight control of nanoscale and even atom-scale topography in a controllable and reproducible fashion during wet etching can be hardly achieved either in laboratory research or industrial production, seriously hindering the enhancement of high-performance Si-based electronic devices . Numerous studies were performed focusing on the etchants, temperature, doping properties, and crystal plane orientation dependence of etching behavior to reveal the etching mechanism of Si wafers, hoping to achieve accurate and reproducible control of etched morphology. − However, accurate process control remained a huge challenge during wet etching, leading to its mismatch with the ever-increasing precision requirement of the Si-based semiconductor industry .…”

Section: Introductionmentioning

confidence: 99%

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Cui

et al. 2022

ACS Appl. Mater. Interfaces

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Wet chemical etching is essential not only for processing silicon (Si) wafers but also for forming diverse structures, significantly promoting the development of the semiconductor industry. However, tight control of etched topography at the nanoscale and even atom-scale in a controllable and reproducible fashion can be hardly achieved in either laboratory research or industrial production, seriously hindering further enhancement of high-performance Si-based electronic devices. Herein, the roles of mechanically driven defects in wet etching were systematically investigated toward promoting controllable wet etching of monocrystalline Si. The role of antietching of mechanically driven amorphous Si (a-Si) and the role of promoting etching of distorted Si (including dislocations and stacking faults) were revealed in anisotropic or isotropic etchants. It was also found that the nucleation of nanocrystals in the a-Si area with increasing contact pressure can lead to deactivation of the antietching mask, and the required contact pressure for deactivation in KOH and tetramethyl ammonium hydroxide solutions was much higher than that in HF/HNO3 mixtures. The selective etching mechanisms for every defect including a-Si, distorted Si, and nanocrystals were further addressed down to the atom-scale based on the proposed dissolution model. This study provides insights into deeply understanding the role of defects in wet etching and pushes forward the idea of controllable wet chemical etching in the Si-based semiconductor industry.

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“…The random distribution of holes on the surface increases the structure density and aspect ratio, and this structure facilitates multiple reflection and absorption of light, thus improving the reflection efficiency. Since the intrinsic band gap of silicon is 1.12 eV, the general black silicon mainly concentrates on suppressing the reflection of light at wavelengths below 1100 nm [ 36 ], and the above structure ensures low reflectance in the visible region. Therefore, this structure can achieve a large surface area via a simple method with no toxic and harmful by-products and has good compatibility with the well-established silicon planar processes.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

Zhao

Zhang

et al. 2021

Micromachines

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We report the fabrication, electromagnetic simulation and measurement of inverted silicon pyramidal arrays with randomly distributed nanoholes that act as an anti-reflectivity coating. The fabrication route combines the advantages of anisotropic wet etching and metal-assisted chemical etching. The former is employed to form inverted silicon pyramid arrays, while the latter is used to generate randomly distributed nanoholes on the surface and sidewalls of the generated inverted silicon pyramidal arrays. We demonstrate, numerically and experimentally, that such a structure facilitates the multiple reflection and absorption of photons. The resulting nanostructure can achieve the lowest reflectance of 0.45% at 700 nm and the highest reflectance of 5.86% at 2402 nm. The average reflectance in the UV region (250–400 nm), visible region (400–760 nm) and NIR region (760–2600 nm) are 1.11, 0.63 and 3.76%, respectively. The reflectance at broadband wavelength (250–2600 nm) is 14.4 and 3.4 times lower than silicon wafer and silicon pyramids. In particular, such a structure exhibits high hydrophobicity with a contact angle up to 132.4°. Our method is compatible with well-established silicon planar processes and is promising for practical applications of anti-reflectivity coating.

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High-resolution image patterned silicon wafer with inverted pyramid micro-structure arrays for decorative solar cells

Cited by 6 publications

References 31 publications

Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

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