High-Resolution Blue-Laser Mastering Using an Inorganic Photoresist

Abstract

An inexpensive and practical mastering technology was developed using a blue-laser optical system with a wavelength of 405 nm and numerical aperture (NA) of 0.95 comprising an inorganic photoresist. The resist system showed a higher resolution for a successful 130 nm pit patterning than that obtained by an ordinary organic photoresist system. Based on this technology, a read only memory (ROM) disc with a recording capacity of 25.2 GB on a 120-mm-diameter surface was mastered at a high recording speed of 4.92 m/s. The disc showed a reasonable jitter value of 8.0% using a conventional equalizer, 4.6% using a limit equalizer and a push-pull signal using a conventional readout optical system of ¼ 405 nm and NA ¼ 0:85.

Laser precision engineering: from microfabrication to nanoprocessing

“…As a result, the precision of the shape and size for small-size data pits becomes difficult due to their intrinsic accumulation effects of the light absorption on the photoresists. In order to overcome these difficulties, recently a new laser thermal lithography (LTL) technology was proposed and demonstrated, which uses inorganic materials as resist and a laser beam as a heat source [78][79][80][81][82][83][84][85][86][87]. The technology is based on the fact that the etch rates for irradiated and unirradiated areas are different.…”

Adhesion effect of interface layers on pattern fabrication with GeSbTe as laser thermal lithography film

“…As a new technology for fabricating micro/nano pattern structures, laser thermal lithography has attracted much attention in recent years owing to its advantages: (I) based on a thermal mode, laser thermal lithography is not limited by any diffraction limit and can yield a super-resolution [5,6], (II) the facilities required are relatively simple and the cost is relatively low [7][8][9], (III) the photo resists used in phase change lithography are inorganic phase change materials, which have a building block whose size of less than 1 nm ultimately limits their resolution. By comparison, typical polymer resists have a molecular weight of 5-20 Â 10 3 units, giving a molecular pixel size of 4-9 nm [10].…”

Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

“…Compared with organic resist materials, inorganic resist materials generally exhibit a high resolution and a clear, regular, and steep edge profile at the boundary after etching due to their light molecular weight and narrow temperature change transition region [7,8]. In recent years, several inorganic resist materials, which include phase-change films, such as Ge-Sb-Te, Te-O, ZnS-SiO 2 or Ge-Sb-Sn-O, and metal oxide films, such as W-O or Mo-O, have been developed [2,3,[9][10][11].…”