High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators

Hodge, Michael D.; Vetury, R.; Gibb, Shawn R.; Winters, Mary; Patel, Pinal; McLain, Michael A.; Shen, Yuhua; Kim, Dae Ho; Jech, Joe; Fallon, Ken; Houlden, Rohan; Aichele, D.; Shealy, J.B.

doi:10.1109/iedm.2017.8268460

Cited by 14 publications

(5 citation statements)

References 7 publications

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“…Recent development in 2D piezoelectric materials clearly demonstrate that 3R‐MoS 2 is capable of maintaining its piezoelectricity for the thickness of a few tens of nanometers. [ 36,68 ] Compared to the resonance frequencies and electromechanical coupling coefficients of several thin film resonators reported by different groups since 2000 [ 2,4,43–65 ] as shown in Figure , the 3R‐MoS 2 SMR developed in this study has the highest fundamental resonant frequency and the highest electromechanical coupling coefficient to the best of our knowledge. These results suggest that utilization of 2D 3R‐MoS 2 flakes for FBAR devices could be a feasible way‐out strategy to achieve higher operation frequencies.…”

Section: Resultsmentioning

confidence: 62%

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Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Yang

Sun

Cai

et al. 2023

Adv Funct Materials

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Conventional bulk and thin piezoelectric materials based film bulk acoustic resonators (FBARs) are facing an insurmountable challenge for millimetric frequency applications due to the poor piezoelectric properties of the materials when their thickness reaches the sub-micron regime. Novel FBARs for ultra-high working frequencies are in urgent demand to meet the requirements of the fast-growing 5/6G telecommunication techniques. Recent advances in 2D piezoelectric nanomaterials create an opportunity in this perspective. Here, the first FBAR chip based on 2D 3R-MoS 2 ultrathin piezoelectric flakes with a solidly mounted resonator (SMR) architecture is reported. The typical resonant frequency for an SMR device based on ≈200 nm 3R-MoS 2 flake reaches over 25 GHz with high reproducibility. Theoretical and finite element analysis suggest that the observed resonance is of longitudinal acoustic modes. This study demonstrates for the first time that the access to 2D piezoelectric nanomaterials makes high performance piezoelectric devices feasible for various promising applications including high-speed telecommunication, acousto-optic, and sensor fields,etc.

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Section: Resultsmentioning

confidence: 62%

“…Resonance frequencies and electromechanical coupling coefficients of several thin film resonators reported by different groups and this work. [ 2,4,43–65 ] …”

Section: Resultsmentioning

confidence: 99%

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Yang

Sun

Cai

et al. 2023

Adv Funct Materials

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“…In 2016, a group from Akoustis Technologies Inc. presented that single crystal AlN-based devices had more than double k eff 2 than poly-crystalline AlN-based devices in the upper bound case, and the FOM is typically 30% higher, although the Q-value is slightly lower in single crystal devices [ 41 ]. In 2017, the same group used metal-organic chemical vapor deposition (MOCVD) to obtain single crystal epitaxial AlN film with 0.5 [ 42 ] and 0.6 [ 36 ] um thickness 4H silicon carbide (SiC) substrates with 150 mm diameter. Resonators showed k eff 2 of 6.32% and 7.63%, and Q max of 1523 and 1572, respectively.…”

Section: Methodsmentioning

confidence: 99%

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

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“…RF silicon-on-insulator (SOI) wafers with 3D monolithic integration, showing significant reduction in footprint and parasitic for RF front-end modules Table shows the comparison among AlScN-based and other piezoelectric material-based resonators. ,,,,− Compared with others, CMOS compatible AlScn-based resonators are capable of achieving a high k eff 2 and FOM.…”

Section: Alscn-based Applicationsmentioning

confidence: 99%

Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications

Chen

Liu

et al. 2022

ACS Appl. Electron. Mater.

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Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to its unique properties. The wurtzite-structure AlScN is compatible with the complementary metal oxide semiconductor (CMOS) process and has improved piezoelectricity compared with undoped aluminum nitride (AlN), making it a promising candidate to be used for next-generation radio frequency (RF) microelectromechanical system (MEMS) building blocks. Additionally, the ferroelectricity observed in AlScN can be potentially applied to ferroelectric memory devices. In this spotlight article, we provide a brief introduction of AlScN and summarize the recent progress of AlScN-based applications, including RF acoustic wave resonators, filters, and ferroelectric memory devices. Finally, the current challenges as well as the future opportunities of AlScN materials and related applications are discussed.

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High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators

Cited by 14 publications

References 7 publications

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications

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High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators

Cited by 14 publications

References 7 publications

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications

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Product

Resources

About

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes