A. El-Shaer, A. Che Mofor, A. Bakin, M. Kreye, A. Waag
The development of Molecular Beam Epitaxy (MBE) of ZnO epilayers employing hydrogen peroxide (H 2 O 2 ) as an oxidant is presented. ZnO layers were grown on (0001)Al 2 O 3 in a modified Varian Gen II MBE system, with H 2 O 2 as an oxygen precursor. Layers with thicknesses from 100 nm to 500 nm were obtained. The influence of growth parameters on structural properties as well as on surface morphology of the zinc oxide layers on sapphire is investigated and discussed. The quality of the layers was improved by e…
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