High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

Huang, Fuqiang; Chu, Michael A.; Tanner, M. O.; Wang, K. L.; U’Ren, G. D.; Goorsky, Mark S.

doi:10.1063/1.126442

Cited by 48 publications

(16 citation statements)

References 7 publications

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“…Several attempts have been made to fabricate SGOI substrates. Huang et al utilized an ultrathin SOI as a ''compliant substrate'' to partially relax an initially strained SiGe film [2,3]. An et al carried out low-energy separation by implantation of oxygen (SIMOX) in a strained-relaxed SiGe virtual substrate [4,5].…”

Section: Introductionmentioning

confidence: 99%

Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation

Huang

Chu

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation

Huang

Chu

et al. 2005

Journal of Crystal Growth

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“…The underlying physical principle of a compliant substrate is to utilize the compliance of the substrate to release the misfit strain in a thin film on top of it without the generation of dislocations. There have been various ways to realize compliant substrates, including wafer bonding, 2 glass transformation through ion implantation 3 and other methods. 4,5 For various silicon-based heterostructural devices, a substrate template for subsequent epitaxy is often desired with a lattice constant between that of silicon and germanium.…”

Section: Introductionmentioning

confidence: 99%

Strain relaxation of SiGe islands on compliant oxide

Yin

Huang

Hobart

et al. 2002

Journal of Applied Physics

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The relaxation of patterned, compressively strained, epitaxial Si0.7Ge0.3 films transferred to borophosphorosilicate (BPSG) glass by a wafer-bonding and etch-back technique was studied as an approach for fabricating defect-free Si1−xGex relaxed films. Both the desired in-plane expansion and undesired buckling of the films concurrently contribute to the relaxation. Their relative role in the relaxation process was examined experimentally and by modeling. Using x-ray diffraction, Raman scattering and atomic force microscopy, the dynamics of in-plane expansion and buckling of Si0.7Ge0.3 islands for island sizes ranging from 10 μm×10 μm to 200 μm×200 μm for anneal temperatures between 750 and 800 °C was investigated. Lateral relaxation is favored in small and thick islands, and buckling is initially dominant in large and thin islands. Raising the temperature to lower viscosity of the oxide enhances the rate of both processes equally. For very long annealing times, however, the buckling disappeared, allowing larger, flat, and relaxed islands to be achieved. Cross-sectional transmission electron microscopy observation on a relaxed Si0.70Ge0.30 island revealed no dislocations, confirming that SiGe relaxation on BPSG is a good approach to achieve high quality relaxed SiGe.

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“…Thus we annealed our samples at 800 1C which was lower than the thermal tolerance of Si 1Ày C y films [12] but we could not find the progress of strain relaxation. Huang et al [13] reported that the relaxation ratio corresponded to the values estimated from the strain partitioning theory after the annealing at 850 1C using B-doped SOI substrates which allow to reduce the annealing temperature. In order to discuss the ''freestanding'' theory in our experiment, we also need to adopt some methods to reduce the annealing temperature.…”

Section: Resultsmentioning

confidence: 91%