High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu‐Syuan; Liu, Cheng; Lu, Yunyou; Huang, Sen; Chen, Kevin J.

doi:10.1109/led.2013.2286090

Cited by 164 publications

(84 citation statements)

References 11 publications

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“…The interface traps could cause threshold voltage (V th ) instability [11]- [13], and the interfacial fixed charges would degrade the mobility of 2-D electron gas (2-DEG) [14]. Significantly reduced interface traps and improved hysteresis have been realized using plasma pretreatment [15], [16], while considerable negative V th shift owing to the positive fixed charges was still observed even with postmetallization annealing [9], [10]. Nitrides, especially AlN, are considered to be the promising gate dielectrics for an excellent interface in III-N devices due to the material compatibility, and several groups have reported on the good dc and RF characteristics of GaN-based MIS-HEMTs with AlN gate dielectric [17]- [20].…”

Section: Improved Interface and Transport Properties Of Algan/gan Mismentioning

confidence: 99%

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Zhu

Xie

et al. 2015

IEEE Trans. Electron Devices

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In this paper, we demonstrated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with AlN gate dielectric grown by plasmaenhanced atomic layer deposition (PEALD). The high-quality interface of AlN/AlGaN/GaN MIS-HEMTs resulted in a very small threshold voltage (V th ) hysteresis and dispersion. Simultaneously, the MIS-HEMTs exhibited a high-peak transconductance of 289 mS/mm and a small V th shift of 0.8 V, while those for Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor HEMTs were 203 mS/mm and 5.2 V, respectively. Furthermore, analysis indicated that PEALD-grown AlN significantly reduced the interface charges at dielectric/III-N interface (from 1.2 × 10 13 to 8 × 10 12 cm −2 eV −1 for interface traps, and from 1.01 × 10 13 to 3.1 × 10 11 cm −2 for fixed charges) and improved channel transport properties (the full-width at half-maximum of channel transconductance increased from 0.9 to 2.7 V), compared with ALD-grown Al 2 O 3 , which could explain the differences of device characteristics.Index Terms-AlGaN/GaN, AlN, interface, metal-insulatorsemiconductor high-electron mobility transistors (MIS-HEMTs), plasma-enhanced atomic layer deposition (PEALD), transport properties.

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Section: Improved Interface and Transport Properties Of Algan/gan Mismentioning

confidence: 99%

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Zhu

Xie

et al. 2015

IEEE Trans. Electron Devices

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“…Many high- k materials such as Al 2 O 3 [10], ZrO 2 [11], MgO [12], and TiO 2 [13] have been investigated for GaN-based MOS capacitors. Among them, ZrO 2 is attractive because it has a high permittivity (~24), large bandgap (5.8 eV), and more importantly, an appropriate value of band offset with GaN (valance band offset ~1.6 eV, conduction band offset ~1.1 eV) [14].…”

Section: Introductionmentioning

confidence: 99%

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

et al. 2017

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GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10−9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

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“…The device fabrication commenced with remote plasma pretreatment (RPP) in a plasma-enhanced atomic layer deposition (PEALD) system to remove the surface native oxide on sample with minimum surface damage [10]. Then a 4-nm PEALD-AlN layer was deposited in-situ, immediately followed by the deposition of a 66-nm silicon nitride layer using PECVD.…”

Section: Introductionmentioning

confidence: 99%

Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT

Hua

Liu

et al. 2016

IEEE Electron Device Lett.

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In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiN x passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiN x gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiN x passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780°C during the LPCVD-SiN x deposition. The AlN/SiN x passivation is shown to be significantly better than the LPCVD-SiN x passivation by delivering small dynamic R ON degradation, especially under high drain bias switching with V DS > 100 V.Index Terms-Gallium nitride, MIS-HEMT, aluminum nitride, silicon nitride, passivation.

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High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Cited by 164 publications

References 11 publications

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT

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High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Cited by 164 publications

References 11 publications

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT

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Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT