High Power Terahertz and Millimeter-Wave Oscillator Design: A Systematic Approach

Abstract

A systematic approach to designing high frequency and high power oscillators using activity condition is introduced. This method finds the best topology to achieve frequencies close to the of the transistors. It also determines the maximum frequency of oscillation for a fixed circuit topology, considering the quality factor of the passive components. Using this technique, in a 0.13 m CMOS process, we design and implement 121 GHz and 104 GHz fundamental oscillators with the output power of 3.5 dBm and 2.7 dBm, respectively. Next, we introduce a novel triple-push structure to realize 256 GHz and 482 GHz oscillators. The 256 GHz oscillator was implemented in a 0.13 m CMOS process and the output power of 17 dBm was measured. The 482 GHz oscillator generates 7.9 dBm (0.16 mW) in a 65 nm CMOS process.

Terahertz technologies: present and future

“…As the cutoff frequency of semiconductor transistors steadily increases, integrated oscillator circuits have recently been reported with compound semiconductor [19], Si bipolar [20], and Si-CMOS transistors [21]; 100-300 μW at 250-350 GHz with InP DHBT, and 160 μW at 482 GHz with CMOS. Figure 6 categorizes configurations of detectors to receive THz signals.…”

A 200-GHz Inductively Tuned VCO With $-$7-dBm Output Power in 130-nm SiGe BiCMOS

“…Despite their limited cutoff frequency and breakdown voltage, recent advances in silicon-based technologies have made them potential candidates for implementation of highly integrated THz radiators and detectors. Recently, high-power and high-frequency oscillators have been demonstrated in silicon [10], [11]. However, having a power-efficient tunable signal source is necessary for many practical applications.…”

Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

“…THz quantum cascade lasers for semiconductor single oscillators have been studied from the optical device side [6,7,8]. On the electron device side, oscillators with heterostructure bipolar transistors (HBTs), high electron mobility transistors (HEMTs), and Si CMOS transistors are being studied intensively as THz sources [9,10,11,12]. Resonant tunneling diodes (RTDs) are also a good candidate [13,14,15].…”