High-performance UV–visible Photodetectors Based on CH3NH3PbI3-Cl /GaN Microwire Array Heterostructures

Liu, Qing; Yang, Yu; Wang, Xingfu; Song, Weidong; Luo, Xingjun; Guo, Jiaqi; Shi, Jiang; Cheng, Chuan; Li, Dongyang; He, Longfei; Li, Kai; Gao, Fangliang; Li, Shuti

doi:10.1016/j.jallcom.2021.158710

Cited by 25 publications

(10 citation statements)

References 33 publications

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“…Then GaN microwires array were synthesized at 1040 °C, as previously described in detail. [ 39,40 ] A series of AlN shells whose thicknesses were 0 nm, 5 nm, 20 nm, and 35 nm were epitaxially grown by adjusting the TMAl injection time. After that, the wafer was inotropic etched in a mixed solution (5:1:1) of HNO 3 , HF, and deionized water for 10 min to get individual microwire, and this was followed by washing to change the mixed solution to isopropanol.…”

Section: Methodsmentioning

confidence: 99%

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Liu

Shi

Wang

et al. 2021

Adv Materials Technologies

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Core–shell heterojunction structure is a feasible approach to optimize the optoelectronic performance of devices by combining the advantages of different materials. In this work, GaN/AlN core–shell heterojunction microwire‐based photodetector (PD) has been fabricated, and appropriate epitaxy growth of AlN can improve the performances of PDs. Compared with pure GaN microwire device, the enhanced responsivity, sensitivity, detectivity, and external quantum efficiency value of 4160 A W−1, 1.88 × 107%, 3.93 × 1012 Jones, and 4.07 × 106% are obtained with 5 nm thick AlN. Meanwhile, a rise/decay time of 25/16 ms is possessed. In addition, the responsivity and detectivity are increased with an acceptable decrease in sensitivity when the exciting light intensity decreases. The effective advances of PDs are benefited from the increased Schottky barrier height, the built‐in electric field that promotes the separation of photogenerated electron‐hole pairs, and direct heteroepitaxial growth high crystal quality GaN/AlN core/shell structure, which will effectively passivate the surface of GaN microwire by covering AlN. This study sheds some light on fabricating high‐performance microwire‐based PDs.

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Section: Methodsmentioning

confidence: 99%

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Liu

Shi

Wang

et al. 2021

Adv Materials Technologies

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“…Five peaks can be clearly observed in both heterojunctions. The two strongest diffraction peaks are from the p-GaN substrate: the peak at 34.5° belongs to the (002) crystal plane of GaN, [28,29] and the peak at 41.6° belongs to the (0006) crystal plane of Al 2 O 3 . [30] The other three sharp peaks at 18.8°, 38.3°, and 58.9° are attributed to the (−201), (−402), and (−603) crystal planes of monoclinic β-Ga 2 O 3 , [31] respectively.…”

Section: Structural and Optical Propertiesmentioning

confidence: 99%

A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga₂O₃/GaN PIN Heterojunction with a Fully Depleted Active Region

Chen

et al. 2023

Advanced Optical Materials

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Ga2O3 is a wide bandgap semiconductor suitable for solar‐blind photodetection, but there exist two issues for Ga2O3‐based photodetectors: first, it is difficult to achieve reliable p‐type Ga2O3 and therefore form a homojunction photodetector, and the other is related with the slow response speed of Ga2O3‐based photodetectors. In this work, a self‐powered solar‐blind photodetector with a fast response using a p‐GaN/i‐Ga2O3/n‐Ga2O3 (pin) heterojunction with a fully depleted active region is realized, where i‐Ga2O3 serves as the main light‐absorbing active region. The device exhibits good self‐powered characteristics with a high responsivity of 72 mA W−1, a high photo‐to‐dark current ratio of 18 800, a high specific detectivity of 3.22 × 1012 Jones, and a fast response speed with a rise time/decay time of 7 ms/19 ms, respectively, without an external power supply. A detailed study of the interfacial electronic structure between p‐GaN and i‐Ga2O3 reveals a conduction band offset and valence band offset of 0.16 and 1.37 eV, respectively. Meanwhile, it has a large built‐in potential of 1.03 eV and a wide depletion region width of 235 nm in the i‐Ga2O3 side of heterojunction. It is believed that excellent device performance comes from a suitable energy band structure and wide depletion region.

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“…Figure 3 shows some typical UV-vis-IR optoelectronic materials and the band structures calculated by first-principles. [110][111][112][113][114][115][116][117][118][119][120][121][122][123][124] In this part, we will discuss the NWs based optoelectronic synaptic devices in different spectral range, and facilitate the future applications of NWs optoelectronic synapses.…”

Section: Uv-vis-ir Optoelectronic Synaptic Devicesmentioning

confidence: 99%

“…a) Some typical UV-vis-IR optoelectronic materials. [110][111][112][113][114][115][116][117][118][119] Band structures of b) GaN. Reproduced with permission.…”

Section: Uv Optoelectronic Synaptic Devicesmentioning

confidence: 99%

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Chen

Jiang

et al. 2022

Adv Funct Materials

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Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non‐contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)‐based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires‐based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs‐based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs‐based optoelectronic synaptic devices.

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High-performance UV–visible Photodetectors Based on CH3NH3PbI3-Cl /GaN Microwire Array Heterostructures

Cited by 25 publications

References 33 publications

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga₂O₃/GaN PIN Heterojunction with a Fully Depleted Active Region

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

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High-performance UV–visible Photodetectors Based on CH3NH3PbI3-Cl /GaN Microwire Array Heterostructures

Cited by 25 publications

References 33 publications

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga2O3/GaN PIN Heterojunction with a Fully Depleted Active Region

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

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A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga₂O₃/GaN PIN Heterojunction with a Fully Depleted Active Region