High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes

Abstract

Very uniform and high aspect ratio anisotropy SiO 2 etching process in magnetic neutral loop discharge plasma Study on characterizing fluorocarbon polymer films deposited on an inner surface during high-aspect-ratio contact hole etching using secondary ion mass spectroscopy

Low-k etching using CF<inf>3</inf>I, a path to overcome current BEOL integration issues

“…From this, it can be deduced that CF 3 I generates very low amount of free fluorine. This was later confirmed by S. Samukawa et al [6] where they used CF 3 I in an Ultra-High Frequency plasma and observed a dominant CF 3 + generation.…”

Plasma-etching profile model for SiO/sub 2/ contact holes

“…The dominant ion is CF in the CF plasma, but the relative abundance of CF , CF , or CF depends on pressure and magnetic field [7]. Various radicals are present: CF , 1-3, C H F (high-molecular-weight radicals), etc., but the CF radical has been reported as the dominant species in the fluorocarbon plasmas by many authors [8], [9]. The Ar gas dilutes the radical densities.…”

Dependence of etch rates of silicon substrates on the use of C4F8 and C4F6 plasmas in the deposition step of the Bosch process

“…[11][12][13][14] In order to reduce PFC emissions, many studies have been carried out to identify environmentally benign alternatives to PFCs, including unsaturated fluorocarbons ͑UFCs͒, such as hexafluoropropene ͑C 3 F 6 , CF 2 v CF-CF 3 ͒, hexafluoro-1,3-butadiene ͑C 4 F 6 , CF 2 v CF-CFv CF 2 ͒, octafluorocyclopentene ͑C 5 F 8 ͒, etc., as well as to determine their etching characteristics. [15][16][17] Although there have been many studies of compounds with alternative chemistry to PFCs for potential applications in the fabrication of microelectronics devices, there are few reports on the use of alternative materials in the Bosch process.…”