High‐Performance Quasi‐2D Perovskite/Single‐Walled Carbon Nanotube Phototransistors for Low‐Cost and Sensitive Broadband Photodetection

Abstract

Quasi‐2D Ruddlesden–Popper perovskites (RPPs) have emerged as promising functional materials for optoelectronics due to the highly tunable optoelectronic properties and have been considered as alternative candidates for semiconductors in photodetectors. However, RPPs normally show low carrier mobilities, which is unfavorable for the performance of photodetectors. Herein, a solution‐processed hybrid phototransistor based on RPP/single‐walled carbon nanotube (SWCNT) heterostructure is reported. A vertical composition gradient is formed upon RPP film preparation, which leads to a gradient type‐II heterojunction in the film. More importantly, the high carrier mobility of SWCNTs can result in ultrahigh responsivity and detectivity of 2 × 106 A W−1 and 7 × 1014 Jones, respectively. In addition, high on/off ratio of ≈103 can be achieved in the phototransistors. Herein, the high potential of RPP/SWCNT hybrid phototransistors as next‐generation photodetectors with superior sensitivity is demonstrated.

UV soaking for enhancing the photocurrent and response speed of Cs2AgBiBr6-based all-inorganic perovskite photodetectors

“…Perovskite materials are one of the most sparkly stars in the optoelectronic field within the last decade owing to their outstanding photoelectric features, including high light absorption coefficient, large carrier mobility, long charge diffusion length and tunable bandgaps [1-4]. To date, various kinds of perovskite materials have been widely applied for optoelectronic devices, such as solar cells [5,6], light emitting diodes [7,8] and photodetectors [9][10][11], showing attractive prospects for both academic and industrial communities. However, some challenges still remain regardless of the rapid increase of device performance.…”

Photoresponse Analysis of All-Inkjet-Printed Single-Walled Carbon Nanotube Thin-Film Transistors for Flexible Light-Insensitive Transparent Circuit Applications

“…As mentioned before, SWCNTs have received a great deal of attention in photodetector applications because of their low band gap. Figure summarizes the operation regions in terms of power intensity and wavelength for previously reported SWCNT-based photodetectors. − ,− ,− Power levels lower than 10 W/m 2 in visible and 1000 W/m 2 in infrared regions containing sunlight region (depicted as the sky-blue region and yellow line in Figure ) are too low to induce any photoresponse from a pure SWCNT film. In other words, SWCNT TFTs can be one of the best candidates for daily-life illumination-insensitive transparent electronics applications.…”

Composition and structure regulation of Ruddlesden–Popper perovskite for light-emitting diodes applications

“…[9][10][11][12][13] RP perovskites also show tunable emission benefited from the controllable anions (Br À , Cl À , I À ). 14,15 Therefore, RP perovskites are increasingly attractive for solar cells, [16][17][18][19][20] lasers, [21][22][23][24] photodetectors, [25][26][27][28] and light-emitting diode (LED) 14,[29][30][31][32] applications due to their unique electrical and optical properties.…”