High-performance organic thin film transistors based on inkjet-printed polymer/TIPS pentacene blends

Cho, Song Yun; Ko, Jung Min; Jung, Jin Gyu; Lee, Jun Young; Choi, Dong Hoon; Lee, Changjin

doi:10.1016/j.orgel.2012.04.007

Cited by 41 publications

(17 citation statements)

References 17 publications

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“…However, it is important to control the crystallization and vertical segregation of small molecules to produce devices with good performance. 14 The type of molecule, the molecular weight (M w ) of the polymer matrix, the rate of solvent evaporation, the rates of crystallization of each component, the surface energy of the substrate, and other characteristics are factors that can influence the vertical segregation. [15][16][17][18][19] Several approaches based on deposition methods are used in the manufacture of printed circuits, 20,21 such as blade coating, inkjet printing, and spray coating, to process organic semiconductor thin films.…”

Section: Introductionmentioning

confidence: 99%

Solvent Effect on Morphology and Optical Properties of Poly(3-hexylthiophene):TIPS-Pentacene Blends

Ozório

Camacho

Cordeiro

et al. 2017

Journal of Elec Materi

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Optical, electrical, and morphological properties of poly(3-hexylthiophene):6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene (P3HT:TP) blend films, in the proportion of 1:1 (w/w), have been investigated using chloroform, toluene, or trichlorobenzene as solvent. The main morphological feature was formation of aggregates that tended to segregate vertically, exhibiting characteristics that were strongly influenced by the type of solvent applied. The phase segregation of TP observed for the P3HT:TP blend film obtained using chloroform, the most volatile of the investigated solvents, can be explained based on the Marangoni effect and the Flory-Huggins model. The TP molecules induce better organization of P3HT, as evidenced by the ultravioletvisible (UV-Vis) absorption spectra. Photoluminescence (PL) measurements revealed quenching and an increase in the lifetime of the carriers. The PL measurements also showed that the exciton dissociation was dependent on the characteristics of the surface on which the film was deposited. P3HT:TP blend film prepared using trichlorobenzene showed the best morphology with moderate phase segregation and better P3HT ordering. The output current from organic field-effect transistors (OFETs) with blend film prepared using trichlorobenzene was three times (39) larger than when using the other solvents, with carrier mobility of 5.0 9 10 À3 cm 2 V À1 s À1 .

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Section: Introductionmentioning

confidence: 99%

Solvent Effect on Morphology and Optical Properties of Poly(3-hexylthiophene):TIPS-Pentacene Blends

Ozório

Camacho

Cordeiro

et al. 2017

Journal of Elec Materi

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show abstract

“…Up to now, several strategies such as blade coating [6,8,9], ink-jet printing [10,11], gravure printing [12,13], and the recently emerged spraying technologies [14][15][16] have been proved to be efficient methods for the fabrication of electronic devices. Among these methods, spray coating has been investigated intensively due to its unique advantage in manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

et al. 2017

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In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60°C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm 2 /Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

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“…Recently, ZnO-based thin-film transistors (TFTs) have attracted considerable attention as alternatives to siliconbased TFTs due to their high carrier mobility, low processing cost, high transparency, and low-temperature processing as compared to conventional amorphous silicon and organic TFTs, [1][2][3] and thus are particularly suitable for driving high-resolution liquid-crystal displays and organic lightemitting-diode pixels. 4,5 For switching or driving transistors in commercial activematrix liquid-crystal displays (AMLCD) or active-matrix organic light-emitting-diode (AMOLED) flat-panel displays, it is crucial to overcome the problem of bias-voltage-dependent instability because any shift in the threshold voltage of the driving transistor under on-or off-bias stress conditions will cause a change in its output drain current, thus leading to variation in the brightness of the relevant pixel.…”

Section: Introductionmentioning

confidence: 99%

Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

Liu

Yao

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Effects of negative gate-bias stress on the electrical properties of ZnO thin-film transistors (TFTs) are investigated. Under negative gate-bias stress, the ZnO TFTs exhibit higher carrier mobility, larger OFF-state current, and a negative shift in threshold voltage with no significant change in subthreshold slope. The time dependence of threshold-voltage shift on various bias stress conditions can be described by a logarithmic equation. Based on the analysis of hysteresis behaviors in current-voltage and capacitance-voltage characteristics before and after the negative gate-bias stress, it can be clarified that the threshold-voltage shift is predominantly attributed to the trapping of positive charge carriers in the defect states at the gate-dielectric/channel interface or in the dielectric during the negative gate-bias stress. V

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High-performance organic thin film transistors based on inkjet-printed polymer/TIPS pentacene blends

Cited by 41 publications

References 17 publications

Solvent Effect on Morphology and Optical Properties of Poly(3-hexylthiophene):TIPS-Pentacene Blends

Solvent Effect on Morphology and Optical Properties of Poly(3-hexylthiophene):TIPS-Pentacene Blends

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

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