High performance of rubrene thin film transistor by weak epitaxy growth method

Chang, Hao; Li, Weili; Tian, Hongkun; Geng, Yanhou; Wang, Haibo; Yan, Donghang; Wang, Tong

doi:10.1016/j.orgel.2015.02.003

Cited by 37 publications

(37 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increased mobility of rubrene thin films is attributed to the improved single orientation of rubrene domains on m-7P layer and less grain boundaries film quality. 73 With the increasing number of benzene rings in the molecule, pentacene (14, Figure 4) thin-film transistors [74][75][76] exhibited a hole mobility of 1.5 cm 2 V −1 s −1 , even up to 5 cm 2 V −1 s −1 , which is higher than that of anthracene. The inside impurities of pentacene induced by the multiple synthesis steps make its performance without purification much worse than that with a few times' purifications.…”

Section: Fused Acenes Hydrocarbons and Their Alkyl Derivativesmentioning

confidence: 99%

Greater than 10 cm² V⁻¹ s⁻¹: A breakthrough of organic semiconductors for field‐effect transistors

Jiang

2021

InfoMat

View full text Add to dashboard Cite

Organic semiconductors have been receiving intensive attention due to the specific advantages of low-temperature processing ability, low-fabrication cost, flexibility, and so forth. The charge carrier mobility of higher than 10 cm 2 V −1 s −1 for organic semiconductors is of great importance to be studied since it presents a future promising research direction toward commercial microelectronic applications. With the significant progress of the discovery of novel organic molecules and the further improvements of device fabrication technology, some organic molecules can break the limit of our knowledge and show very high mobilities. In this review, organic polymers and small molecules with mobilities above 10 cm 2 V −1 s −1 are first introduced to provide the readers with a general understanding of the features and characteristics of high-performance organic semiconductors. Then, some important parameters, including the molecular structures, the device configurations, and the performance, are discussed in detail. Finally, the clues to obtain high mobility are summarized, and the perspective toward the future possible research directions are also provided.

show abstract

Section: Fused Acenes Hydrocarbons and Their Alkyl Derivativesmentioning

confidence: 99%

Greater than 10 cm² V⁻¹ s⁻¹: A breakthrough of organic semiconductors for field‐effect transistors

Jiang

2021

InfoMat

View full text Add to dashboard Cite

show abstract

“…Among these methods, area‐selective growth techniques, which exploit the growth on predefined templates, have provided efficient routes to pattern functional molecular layers. Recently, high‐performance OFETs with mobility values of more than 10 cm 2 V −1 s −1 have been obtained based on highly ordered and 2D molecular materials . However, the fabrication of such high‐mobility OFETs relies on shadow mask patterning, which is inherently incompatible to facile size‐scalable fabrication technologies.…”

Section: Introductionmentioning

confidence: 99%

Fully Integrated Microscale Quasi‐2D Crystalline Molecular Field‐Effect Transistors

Bandari

Shi

et al. 2019

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

Monolithic integration of microscale organic field-effect transistors (micro-OFETs) is the only and inevitable path toward low-cost large-area electronics and displays. However, to date, such an ultimate technology has not yet evolved due to challenges in positioning and patterning highly crystalline microscale molecular layers as well as in developing micrometer scale integration schemes. In this work, by mastering the local growth of molecular semiconductors on pre-defined terraces, single-crystal quasi-2D molecular layers tens of square micrometers in size are created in dense periodic arrays on a Si substrate. Nondestructive photolithographic processes are developed to pattern micro-OFETs with mobilities up to 34.6 cm 2 V −1 s −1 . This work demonstrates the feasibility to integrate arrays of short-channel micro-OFETs into electronic circuitry by highly parallel and size scalable fabrication technologies.

show abstract

“…Moreover, rubrene shows high singlet fission efficiencies in both, single crystals 22,23 and amorphous thin films 24 . Rubrene became thus a model system to study intermolecular interactions and charge transport properties of molecular solid states 10,20,21,[25][26][27][28][29][30][31] . The outstanding charge transport properties might be related to the peculiar molecular structure of rubrene with the frontier orbitals mainly located on the tetracene backbone and the electronically inactive phenyl side groups 28,[32][33][34] .…”

Section: Introductionmentioning

confidence: 99%

“…Evaporated rubrene thin films, however, are often amorphous [37][38][39][40] and mobilities low. This obstacle for device performance can be overcome by substrate pre-patterning 41 and recently also in evaporated rubrene thin film hole mobilities of up to 11.6 cm 2 /Vs have been measured 25 .…”

Section: Introductionmentioning

confidence: 99%

Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole–Phonon Coupling

Bussolotti

Xin

et al. 2016

J. Phys. Chem. C

View full text Add to dashboard Cite

Charge transport in molecular thin films is often dominated by incoherent hopping processes and charge-carrier phonon coupling plays a major role in defining mobilities. Our high resolution angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) study reveals the influence of molecular configuration and packing on the hole-phonon coupling in vacuum-sublimed thin films of rubrene on graphite and allows determining charge reorganization energies. In the contact layer to the substrate rubrene is well-ordered with, for low coverages, the tetracene backbone being almost parallel to the graphite surface forming a loose-packed monolayer. Increasing the coverage leads to an orientational transition and a more tilted orientation of rubrene in a close-packed monolayer. This transition results in dramatic changes of spectral features in ARUPS including the photoelectron angular distribution of the highest occupied molecular orbital derived intensity. The charge reorganization energy, however, only changes slightly. The transient monolayer structure of rubrene on graphite allows thus to demonstrate that hole-phonon coupling in organic thin films does not depend very critically on the packing structure. IntroductionLow charge-carrier mobilities are often limiting the performance of organic (opto-)electronic devices as charge transport in organic semiconductor thin films is often dominated by incoherent hopping processes 1-4 . Hopping mobilities depend critically on the charge-carrier phonon coupling 5-8 , which determines the charge reorganization energy λ. In most molecular thin films intermolecular interactions are weak and λ is consequently dominated by intramolecular vibrations and is often taken from gas-phase calculations 5,9-11 or gas-phase ultraviolet photoelectron spectroscopy (UPS) data 9,12-14 . However, the relevant quantities for device application are the solid state values, which depend on the molecular surrounding, i.e. the interaction with neighboring molecules and/or a substrate 7,15 . Due to the similarities of ionization (followed by neutralization) during localized hopping transport and photoionization, UPS is the method of choice to measure charge reorganization energies of organic thin films by an analysis of the vibrational fine structure of the highest occupied molecular orbital (HOMO)-derived peak 7,8,[15][16][17][18] . The relevant vibrational energies (hν i ) of a molecule are often centered closely and in good approximation the analysis can be done by a single mode fit with one main vibrational energy (hν) 19 . Moreover, in most molecular thin films the relaxation energies for ionization and neutralization of a molecule are rather similar and the charge reorganization energy is thus simply given by λ=2Shν with S being the Huang-Rhys factor, which is determined by the relative intensity contribution to the vibrational progressions 7,13 .

show abstract

High performance of rubrene thin film transistor by weak epitaxy growth method

Cited by 37 publications

References 29 publications

Greater than 10 cm² V⁻¹ s⁻¹: A breakthrough of organic semiconductors for field‐effect transistors

Greater than 10 cm² V⁻¹ s⁻¹: A breakthrough of organic semiconductors for field‐effect transistors

Fully Integrated Microscale Quasi‐2D Crystalline Molecular Field‐Effect Transistors

Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole–Phonon Coupling

Contact Info

Product

Resources

About

High performance of rubrene thin film transistor by weak epitaxy growth method

Cited by 37 publications

References 29 publications

Greater than 10 cm2 V−1 s−1: A breakthrough of organic semiconductors for field‐effect transistors

Greater than 10 cm2 V−1 s−1: A breakthrough of organic semiconductors for field‐effect transistors

Fully Integrated Microscale Quasi‐2D Crystalline Molecular Field‐Effect Transistors

Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole–Phonon Coupling

Contact Info

Product

Resources

About

Greater than 10 cm² V⁻¹ s⁻¹: A breakthrough of organic semiconductors for field‐effect transistors

Greater than 10 cm² V⁻¹ s⁻¹: A breakthrough of organic semiconductors for field‐effect transistors