High-Performance MoS₂ Complementary Inverter Prepared by Oxygen Plasma Doping

Abstract

Two-dimensional transition-metal chalcogenide has become one of the most promising materials for miniaturization beyond Moore’s law due to its atomic-level thickness and excellent semiconductor properties. The inverter is the most basic logic gate circuit. Using double-temperature zone chemical vapor deposition and oxygen plasma doping technique, we obtained n-type and p-type MoS2 materials and designed an MoS2 CMOS inverter, showing excellent electrical performance. Under the condition of V dd = 5 V, the peak voltage gain of the inverter is 7.48, the maximum static power consumption is 37.7 nW, the noise margin low is 0.45V dd, the noise margin high is 0.32V dd, and the inverter exhibits better V in–V out signal matching. After a 42 day duration in an air environment at room temperature, the V out of the inverter was reduced by only 3.75% in the case of a high level of output voltage, and the low level of output voltage is basically unchanged.

Effect of Large-Area Exfoliation and Etching on the Electrical Behavior of Transition-Metal Dichalcogenide Field-Effect Transistors

“…A fluorine peak was not observed in the measurement. The oxygen incorporation suggests the formation of MoO 3 on the backchannel surface that results in a negatively charged defect, consistent with previous reports on the p-type doping in exfoliated or CVD MoS 2 with oxygen. − By reducing t s to less than 15 nm, the oxygen-doped layer and the accumulation region become closer, leading to a positive shift in the threshold voltage (Figure (b,c)). The oxygen doping concentration in the channel layer is estimated to be ∼1 × 10 19 cm –3 , extracted from the V th variation for t s < 15 nm (eq ).…”

“…The oxygen doping concentration in the channel layer is estimated to be ∼1 × 10 19 cm −3 , extracted from the V th variation for t s < 15 nm (eq 1). 44 Electrical stability measurements of the TFT structures correlate with the measured device characteristics. It was found that reducing the MoS 2 bulk thickness from 65 to 15 nm improved the electrical stability by ∼6% of the TFTs operating under constant dc bias (Figure S7).…”

Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation

“…Oxygen molecules capture electrons in MoS 2 (ref. [66][67][68] and at the dangling bonds of the 2D material defect sites the chemical and physical adsorption of molecules can be enhanced. [69][70][71] Although the amount of adsorbed molecules should be reduced under vacuum conditions, ion irradiation can lead to the formation of chemically adsorbed MoO 3 at the defect edges, which would be very resistant to vacuum assisted desorption 33 and could also explain the observed reduction in ndoping.…”

Interaction Modification of Transition Metal Dichalcogenide Layers by Halogenation

“…Since the discovery of graphene, bidimensional (2D) materials stood out as materials presenting outstanding properties to be explored in a myriad of applications. Photovoltaic devices, , hydrogen evolution reaction (HER) catalyst, photodetectors, − DNA sensors, transistors, and Li-ion batteries , are examples of technologies that could profit from such properties. Transition metal dichalcogenides (TMDs) are a class of these materials with a lamellar structure similar to that of graphite.…”