High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Chu, K.; Chao, P.C.; Diaz, J.; Yurovchak, Thomas; Schmanski, B.; Creamer, Carlton; Sweetland, Scott; Kallaher, R. L.; McGray, Craig D.; Via, G. D.; Blevins, J. D.

doi:10.1109/csics.2015.7314511

Cited by 15 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The bombardment of the diamond surface with Ar ions induced its amorphization, creating an additional 3 nm-thick amorphous diamond Upon solving these issues, the PAE of 12 × 50 µm GaN/diamond HEMTs increased to 51% and P D to 11.0 W/mm at 10 GHz. For the same V D , the P D of 4 × 50 µm GaN-on-SiC HEMTs was only 9.2 W/mm, showing a 3.5 times areal power increase with GaN-ondiamond HEMTs (Figure 7b) [111]. Even under these conditions, the temperature at the center gates was slightly lower for the GaN-on-diamond HEMT than for the GaN-on-SiC HEMT (195 against 202 • C, respectively).…”

Section: Bonded Wafersmentioning

confidence: 99%

“…Using a different method, Dussaigne et al [127] reported the growth of 1 µm-thick GaN epilayers on 100 nm-thick AlN layers previously deposited on (111) HPHT SCD substrates by ammonia (NH 3 )-source MBE. The films displayed a low RMS roughness of 1.3 nm and some cracks due to the difference in the CTEs of diamond and GaN; cracks were not formed for GaN epilayers with thicknesses lower than 250 nm.…”

Section: Gan Epitaxymentioning

confidence: 99%

See 1 more Smart Citation

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

View full text Add to dashboard Cite

Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. On the search of effective thermal management solutions, the integration of GaN and synthetic diamond with high thermal conductivity and electric breakdown strength shows a tremendous potential. A significant effort has been made in the past few years by both academic and industrial players in the search of a technological process that allows the integration of both materials and the fabrication of high performance and high reliability hybrid devices. Different approaches have been proposed, such as the development of diamond/GaN wafers for further device fabrication or the capping of passivated GaN devices with diamond films. This paper describes in detail the potential and technical challenges of each approach and presents and discusses their advantages and disadvantages.

show abstract

Section: Bonded Wafersmentioning

confidence: 99%

Section: Gan Epitaxymentioning

confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

View full text Add to dashboard Cite

show abstract

“…4. IR images comparing a GaN-on-SiC (left) to a GaN-on Diamond (right) transistor, both DC biased at 20 W Imm dissipated power, adopted with permission from [18].…”

Section: A Diamond Bonded To Ganmentioning

confidence: 99%

Near-junction microfluidic thermal management of RF power amplifiers

Bar‐Cohen

Maurer

Sivananthan

2015

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

View full text Add to dashboard Cite

While gallium nitride (GaN) is attracting broad attention as the wide bandgap material of choice for both industrial and defense applications, thermal impediments present a significant barrier to full exploitation of its inherently high electron sheet charge density and electrical breakdown voltage. For the last four years, the Defense Advanced Research Projects Agency (DARPA) has pursued research focused on reduction of near-junction thermal resistance through use of diamond substrates and convective and evaporative microfluidics. The options, challenges, and techniques associated with the development of this embedded thermal management technology are described, with emphasis on the accomplishments and status of efforts related to GaN power am plifiers.

show abstract

“…Starting from the 3D integration in microelectronics, bonding processes are commonly used in the fabrication of micro electro-mechanical systems [1], in heat flow management for high power transistors or photonic devices [2], [3], and more recently in the emerging development of silicon photonics and heterogeneous integration of III-V compounds on a mature silicon platform [4] [5] [6]. In most cases, the bonding of two (or more) different (or not) substrates allows improving the device performances, or the emergence of new components and functionalities which would otherwise not be possible.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias

Taleb

Pes

Paranthoën

et al. 2017

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

International audienceWe report on a new cost effective, with a low temperature budget and simple bonding process on silicon, presenting efficient heat spreading and great potentialities in integration. This process is based on a thick electro-plated copper bonding layer through silicon vias and is expected to reduce significantly the bonded device internal temperature. We apply this process to realize 1.55-μm emitting vertical-cavity surface-emitting lasers. We demonstrate continuous wave operation from room temperature up to 55 °C, an internal temperature reduction of 13 °C, and we estimate a decrease of 30% of the overall device thermal impedance

show abstract

High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Cited by 15 publications

References 6 publications

Diamond/GaN HEMTs: Where from and Where to?

Diamond/GaN HEMTs: Where from and Where to?

Near-junction microfluidic thermal management of RF power amplifiers

Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias

Contact Info

Product

Resources

About