High-Performance a-IGZO Thin-Film Transistor Using $ \hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric

High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

“…The l FE,sat value scatters over 10 test devices and the average value is 116.9 ± 4.6 cm 2 V À1 s À1 . This l FE,sat value greatly exceeds those reported by other TFTs based on a-IGZO/high-j dielectric [6,7].…”

“…In general, this is realized with high dielectric constant (high-j) materials [6,7] or ultrathin self-assembled monolayer dielectrics [8,9]. In addition to above materials, an interesting alternative is to use electrolyte dielectrics to gate TFTs.…”

Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor

“…The Ta 2 O 5 film was used as a gate dielectric because of its high dielectric constant of ∼29. 28 A 150 nm thick aluminum (Al) gate electrode was made using the e-beam evaporation method and the image-reversal process of photolithography. The channel length and width of the fabricated a-IGZO TFTs were 10 and 20 μm, respectively.…”

Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System

“…Recently, the various quaternary materials have been extensively researched for requiring a better performance of optoelectronic devices, such as ZnInSnO (ZITO), 1,2) In GaZnO (IGZO), 3) CuInGaS (CIGS) 3) and CuZnSn Se (CZTSe). 4) Particularly, the ZITO material simultaneously possesses ZnO and ITO characteristics that can be applied in many fields of optoelectronics.…”