High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Yabuta, Hisato; Sano, Masafumi; Abe, Katsumi; Aiba, Toshiaki; Den, Tohru; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

doi:10.1063/1.2353811

Cited by 1,113 publications

(658 citation statements)

References 24 publications

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“…These TFTs exhibit very high mobilities up to 55 cm 2 /V s although they were subjected to high-temperature annealing at 300-600 °C, giving us the expectation that AOS TFT technology will extend to highspeed circuit applications on glass and flexible substrates. For room temperature-fabricated AOS TFTs, Canon fi rst succeeded in fabricating a-IGZO TFTs by radiofrequency (RF) magnetron sputtering [48]. Combinatorial approaches have been employed to screen multi-component AOS systems, including the In-Ga-Zn-O system [49] and Zn-Sn-O (ZTO) system [50].…”

Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…Among the available flexible semiconductor films, indiumgallium-zinc-oxide (IGZO) has shown perhaps the most commercial potential due to its high electron mobility and possibility of low-temperature film deposition on plastic substrates [2][3][4][5][6] . It has already seen rapid adoption as the channel material in backplane driver transistors in some newest flat-panel displays, where a transistor speed of 200 Hz suffices 7,8 .…”

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Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

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“…The oxygen vacancy and hydrogen in oxide semiconductors are mainly regarded as sources of charge carrier. The oxygen vacancy can be controlled through various methods, such as by increasing the oxygen partial pressure during the active sputtering, by annealing in an oxygen atmosphere, and through plasma treatment [3,4]. In terms of hydrogen, due to the high electronegativity of oxygen in the ionic bonding of oxide semiconductors, H incorporation in the oxide semiconductor is unavoidable.…”

Section: Introductionmentioning

confidence: 99%

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Nam

Kim

Cho

et al. 2016

Journal of Information Display

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Park (2016) Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor, Journal gate dielectric exhibit poor transistor characteristics, such as low mobility, a high subthreshold slope, and huge hysteresis. Through DC and short-pulsed current-voltage (I-V) measurements, it was revealed that the degradation of the transistor performance stems from the charging and discharging phenomenon at the interface traps located in the interface between the a-IGZO semiconductor and the Al 2 O 3 gate insulator. It was found that the low-temperature Al 2 O 3 atomic layer deposition processed film contains a higher density of hydrogen atoms compared to high-deposition-temperature films. The study results show that a high concentration of hydrogen atoms can passivate the defect sites in the interface and bulk, which produces excellent transistor characteristics. This study demonstrated that hydrogen has a beneficial effect on the defect passivation for oxide TFTs. ARTICLE HISTORY

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High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Cited by 1,113 publications

References 24 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

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