High-mobility polymer gate dielectric pentacene thin film transistors

Klauk, Hagen; Halik, Marcus; Zschieschang, Ute; Schmid, Günter; Radlik, Wolfgang; Weber, W.

doi:10.1063/1.1511826

Cited by 1,161 publications

(689 citation statements)

References 11 publications

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“…Organic semiconducting materials are used to fabricate transistors with electronic properties comparable to a-Si:H [1][2], a material often used for back panel circuits of active matrix displays. These comparable electronic characteristics together with the promising low-cost fabrication [3] makes organic materials attractive candidates for use in commercial products.…”

Section: Introductionmentioning

confidence: 99%

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Pernstich

Rashid

Haas

et al. 2004

Journal of Applied Physics

530

492

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We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4 × 10 12 /cm 2 . In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold region is broadened, indicating that the SAM creates additional trap states, whose density is estimated to be of order 1 × 10 12 /cm 2 .

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Section: Introductionmentioning

confidence: 99%

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Pernstich

Rashid

Haas

et al. 2004

Journal of Applied Physics

530

492

View full text Add to dashboard Cite

show abstract

“…1,2 Among many organic semiconductors investigated, pentacene has been shown to possess the highest mobility in thin-film states, and the mobility is favorably compared with that of hydrogenated amorphous silicon. [3][4][5] Most materials with high mobility in thin-film state such as pentacene and thiophene derivatives are p-type semiconductor whose main carrier is hole. [6][7][8] However, there have been few reports on high performance n-type organic TFTs.…”

mentioning

confidence: 99%

High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

Tatemichi¹,

Ichikawa²,

Koyama³

et al. 2006

Applied Physics Letters

260

241

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The authors demonstrated that N , NЈ-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide ͑PTCDI-C13͒ thin-film transistors ͑TFTs͒ exhibited high field-effect electron mobility of 2.1 cm 2 / V s by just annealing at an adequate temperature ͑140°C͒ after the TFT fabrications. While PTCDI-C13 formed c-axis oriented thin films, the thermal treatments improved crystallinity of the thin films as revealed by x-ray diffraction. The thermal treatment also affected thin-film morphologies; the morphologies changed from oval ball-like grains to flat and large tilelike grains, which had molecular height steps and whose size reached several micrometers.

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“…It has been recently reported by several groups that mobility for organic transistors with pentacene as channel layers exceeds 1 cm 2 =Vs Vs and on=off ratio goes far beyond 10 7 [1][2][3][4][5]. Both of those numbers are comparable to or somewhat larger than those of amorphous silicon.…”

Section: Introductionmentioning

confidence: 51%

Organic Transistor Integerated Circuits for Large-Area Sensors

Someya

Sekitani

Iba

et al. 2006

Molecular Crystals and Liquid Crystals

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It is believed that skin sensitivity will be important for future robots working in our daily life for home-care and entertainment purposes. However, relatively little progress has been made in the field of pressure recognition compared to the areas of sight and voice recognition, mainly because good artificial ''electronic skin'' with a large area and mechanical flexibility is not yet available. The fabrication of a sensitive skin consisting of thousands of pressure sensors would require a flexible switching matrix that cannot be realized with present silicon-based electronics. Organic field-effect transistors can be used complimentary to such conventional electronics because organic circuits are inherently flexible and potentially ultralow in cost even for large area. In this paper, we describe that integration of organic transistors and rubber pressure sensors provides an ideal solution to realize a practical artificial skin.

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High-mobility polymer gate dielectric pentacene thin film transistors

Cited by 1,161 publications

References 11 publications

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

Organic Transistor Integerated Circuits for Large-Area Sensors

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