High mobility, highly transparent, smooth, <i>p</i>-type CuI thin films grown by pulsed laser deposition

Storm, Philipp; Bär, M.; Benndorf, G.; Selle, Susanne; Yang, Chan; Wenckstern, Holger von; Grundmann, Marius; Lorenz, Michael

doi:10.1063/5.0021781

Cited by 51 publications

(81 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In general, a trend to higher resistivities with increasing growth temperatures is observed, similar to previous investigations of PLD-grown CuI. [15] However, the usually applied Al 2 O 3 capping is still far from being sufficient, in particular concerning the long-term oxygen shielding toward consistent carrier densities on a year's scale. Therefore, SiN y O x was investigated as another capping material that can be grown by PLD in situ.…”

Section: Resultssupporting

confidence: 88%

“…The selenium content is always relative to the iodine composition. For more information on crucial thin film properties of PLDgrown CuI and the effect of Al 2 O 3 capping layers, please refer to the studies by Storm and co-workers [15,22] Wide-angle X-ray diffraction (XRD) 2θ-ω scans of binary CuI and doped CuI:Se thin films on c-sapphire are shown in Figure 1a. For all samples, the CuI grows exclusively in (111) orientation up to the highest investigated selenium content of xðSeÞ ¼ 10 at.%.…”

Section: Resultsmentioning

confidence: 99%

“…[6,7] Thin film growth has already been demonstrated by various methods such as spin coating, [8] iodization, [9,10] thermal evaporation, [11] sputtering, [12] ion beam sputtering, [13] molecular beam epitaxy, [14] or pulsed laser deposition (PLD). [15] The high and usually degenerate conductivity of CuI is often attributed to intrinsic copper vacancies. [1,[16][17][18] However, doping attempts with iodine, exploiting the intrinsic defects, are inconclusive and seemingly dependent on the growth technique.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

p‐Type Doping and Alloying of CuI Thin Films with Selenium

Storm

Bär

Selle

et al. 2021

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

The impact of the intentional selenium doping of CuI thin films is investigated concerning crucial crystalline, electrical and optical properties. For selenium contents in between 0.1 at.% and 1 at.%, the carrier density can be systematically adjusted by the selenium supply during growth between cm and cm while transparency and crystallinity remain unaffected. By temperature‐dependent Hall‐effect measurements, a carrier freeze out is observed and the binding energy of the selenium dopant is determined. The long‐term electrical stability in combination with cappings is significantly improved compared to undoped or oxygen doped CuI. However, for selenium contents exceeding 1 at.%, major crystalline changes are observed that are presumably correlated to a phase transformation. Transmission and electrical measurements suggest that the solubility limit of Se in CuI is about 1 at.% since a degradation of the transparency and decreasing free hole densities are observed for Se contents exceeding 1 at.%. Hence, the doping limit for Se in CuI corresponds to 1 at.%.

show abstract

Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

p‐Type Doping and Alloying of CuI Thin Films with Selenium

Storm

Bär

Selle

et al. 2021

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

show abstract

“…PLD‐fabricated CuI films were achieved by sintering the CuI ceramic target using a KrF excimer laser (Figure 3c ). [ 80 , 81 , 82 ] More recent studies have systematically investigated the growth and fundamental properties of PLD‐grown CuI thin films. [ 82 ] With an increase in the growth temperature, the hole concentration decreased and the mobility increased owing to the reduced ionized impurity scattering.…”

Section: Cui Introduction Deposition Method and Electrical Property Modulationmentioning

confidence: 99%

“…[ 80 , 81 , 82 ] More recent studies have systematically investigated the growth and fundamental properties of PLD‐grown CuI thin films. [ 82 ] With an increase in the growth temperature, the hole concentration decreased and the mobility increased owing to the reduced ionized impurity scattering. The hole concentrations could be modulated over a wide range of 5 × 10 16 –10 19 cm −3 with the highest Hall mobility up to 20 cm 2 V −1 s −1 at 240 °C.…”

Section: Cui Introduction Deposition Method and Electrical Property Modulationmentioning

confidence: 99%

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

et al. 2021

View full text Add to dashboard Cite

Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p-n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.

show abstract

(111)‐Oriented Growth and Acceptor Doping of Transparent Conductive CuI:S Thin Films by Spin Coating and Radio Frequency‐Sputtering

et al. 2023

Self Cite

View full text Add to dashboard Cite

Anion doping is an efficient method for modifying the electrical property of the p‐type semiconductor CuI. However, adjustment of the hole density is still challenging. Using sputtering and spin coating techniques, well‐controlled S‐doping of CuI thin films has been realized. The spin‐coated samples present a single (111) out‐of‐plane orientation and very high crystallinity, which is comparable with previously reported epitaxial CuI thin films. The sputtered thin films have advantages in surface morphology and conductivity. Substituting S for I can achieve efficient acceptor doping of CuI for both the physical and chemical growth methods. The highest conductivity of CuI appears at 2.0 at% of S doping, and the doping efficiency is influenced by the self‐compensation effect.

show abstract

High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition

Cited by 51 publications

References 35 publications

p‐Type Doping and Alloying of CuI Thin Films with Selenium

p‐Type Doping and Alloying of CuI Thin Films with Selenium

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

(111)‐Oriented Growth and Acceptor Doping of Transparent Conductive CuI:S Thin Films by Spin Coating and Radio Frequency‐Sputtering

Contact Info

Product

Resources

About