High-Mobility GaSb Nanostructures Cointegrated with InAs on Si

Abstract

GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface layer and, in turn, is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects, and even occasional twin-free structures are observed. Hall/van der Pauw measurements are conducted on 20 nm-thick GaSb nanostructures, revealing high hole mobility of 760 cm/(V s), which matches literature values for high-quality bulk GaSb crystals. Finally, we demonstrate a process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V metal-oxide-semiconductor technology.

InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding

“…When working on an SOI platform as in [20], the TASE approach supports in-plane integration with Si. Using the same technique, by repeated growth runs, we have also demonstrated the dense local integration of different III-V families on the same silicon wafer [29].…”

Recent advances in III-Sb nanowires: from synthesis to applications

“…Also, antiphase defects and threading dislocations are avoided in this method. So far, high-quality GaSb NWs (figure 1(c)) have been grown by this method which will be discussed in a later part [62].…”

“…Copyright 2014 American Chemical Society). (c) Selective-area growth (SAG): GaSb NW-like structure grown by template-assisted selective epitaxy (TASE)[62] (adapted with permission from[62]. Copyright 2017 American Chemical Society).…”

Gate-tunable electronic transport in p -type GaSb quantum wells

“…In the latter case, no field effect has been reported so far. Meanwhile, GaSb p-type nanowires are also the subject of intense research, much for the same reasons [9][10][11][12][13][14] .…”