High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz

Nelson, B.; Umemoto, D.K.; Perry, C.B.; Dixit, R.; Allen, B.; Kim, M.E.; Oki, A.K.

doi:10.1109/mcs.1990.110928

Cited by 41 publications

(5 citation statements)

References 3 publications

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“…It is well known, from the S-parameters of a balanced amplifier, that if the two amplifiers are identical, then the best return loss are achieved (S 11 = 0 and S 22 = 0) and therefore the return loss depend on the combiner/divider [13]. In this context several balanced amplifiers have been proposed in [14][15][16][17][18][19][20][21][22]. From Table 1, given in [14], it can be found that the maximum FBW of published balanced amplifiers is 97.9%.…”

Section: Implementation and Results Of A Balanced Amplifier By Using mentioning

confidence: 99%

“…If the PRHb section is considered as a conventional transmission with characteristic impedance Z P RH (= Z c = 50 Ω) and electrical length Θ P RH then replacing (18) and (19) into (3) ones arrives to the electrical length of the bottom branch is Θ P RH = 50 • at the central frequency. In this context proposed differential phase shifter exhibits smaller size than those proposed in [8][9][10].…”

Section: Proposed Quadrature Power Divider and Its Design Methodsmentioning

confidence: 99%

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A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

Olvera‐Cervantes

Corona‐Chávez²,

Chávez‐Pérez³

et al. 2013

PIER C

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Abstract-In this paper, a novel broadband quadrature power divider and its robust design method are presented. The QPD consists of a two-section power divider in combination with a 90-degree differential phase shifter. The two-section power divider is calculated to provide equal power split, high output port isolation, and good return loss at all three ports. The differential phase shifter consists of a composed right/left handed transmission line and pure-right handed transmission line named CRLHu-TL and PRHd-TL, respectively. The CRLHu-TL is divided into two parts; one of them consists of a pure-left handed section whose parasitic pad effects are represented by means of a pure right handed section named PRHp. On the other hand, the PRHd-TL is composed by a microstrip transmission line of characteristic impedance 50 Ω and electrical length 50 • and two sections equivalents to PRHp. The proposed circuit is applied to develop a broadband balanced amplifier with measured fractional bandwidth (FBW) of 124.4% at the center frequency of 2 GHz.

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Section: Implementation and Results Of A Balanced Amplifier By Using mentioning

confidence: 99%

Section: Proposed Quadrature Power Divider and Its Design Methodsmentioning

confidence: 99%

A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

Olvera‐Cervantes

Corona‐Chávez²,

Chávez‐Pérez³

et al. 2013

PIER C

View full text Add to dashboard Cite

show abstract

“…In effect, there is a trade-off between having dc bias stability and sufficient gain at low frequencies. The majority of the HBT based DAs reported in the open literature have been designed without bias stabilisation emitter resistors [5,6]. As a consequence, the performance of such amplifiers is prone to noticeable change in the presence of ambient temperature variations.…”

Section: Hbt Based Distributed Amplifiersmentioning

confidence: 99%

“…MESFET and HEMT based DAs have been widely demonstrated [2][3][4], but the use of HBTs in DAs is a relatively new approach [5][6][7]. HBTs are expected to offer linearity, 1/f noise and power handling advantages over their MESFET/HEMT based counterparts, in addition to requiring less stringent lithographic requirements [8].…”

Section: Introductionmentioning

confidence: 99%

A 23 GHz Baseband HBT Distributed Amplifier for Optical Communication Systems

Iqbal¹,

Darwazeh²

1998

1998 28th European Microwave Conference

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This paper reports on a practical HBT distributed amplifier MMIC suitable for optical receiver applications. The circuit topology is based upon application of a novel technique which allows baseband operation in conjunction with dc bias stabiliastion and does not consume a large amount of chip area. 2x2 umn2 single emitter finger InGaP/GaAs HBTs with fT = 60 GHz and pdc 100 have been employed. Simulation results show a bandwidth extending from neardc to 23 GHz and an S21 gain of 11±1 dB at midband. The amplifier has a transimpedance gain of 45± 1 dBQ and a group delay variation of± 30 ps across the passband. Eye diagram simulations indicate its potentialfor handling data rates of up to 30 Gbit/s when employed as an optical receiver preamplifier.

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“…The performance of distributed amplifiers using the HBT rather than MESFET as the active device has recently been reported [1,2]. A large amount of work has been published which predicts the theoretical small-signal gain of the MESFET DA [3,4], but there has been little corresponding work published specifically for the HBT DA [5].…”

Section: Introductionmentioning

confidence: 99%

Predicted Small-Signal Gain of the HBT Distributed Amplifier with Practical Terminations

Botterill¹,

Aitchison²

1994

24th European Microwave Conference, 1994

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Recent interest in the heterojunction bipolar transistor (HBT) distributed amplifier (DA) has led to a need for an analytical expression predicting its small-signal gain. Previously published DA analysis has almost always assumed ideal characteristic impedance terminations as a basis. This assumption introduces inaccuracy into the prediction of the performance of a practically terminated DA, which has been found to be more significant in the case of the HBT DA than in the case of the MESFET DA. This paper describes an analytical expression which has been developed to predict the small-signal gain of an arbitrarily terminated DA. By removing the restriction of characteristic impedance terminations from the analysis, better agreement with the simulated performance of an HBT DA with practical terminations has been obtained. Emphasis has also been placed on basing theoretical analysis on a simplified equivalent HBT model which is, as far as possible, physically meaningful.

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High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz

Cited by 41 publications

References 3 publications

A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

A 23 GHz Baseband HBT Distributed Amplifier for Optical Communication Systems

Predicted Small-Signal Gain of the HBT Distributed Amplifier with Practical Terminations

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