High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Raeissi, Bahman; Piscator, Johan; Engström, Olof; Hall, Steve; Buiu, O.; Gottlob, H. D. B.; Hurley, Paul K.; Cherkaoui, Karim; Osten, H. J.

doi:10.1016/j.sse.2008.04.005

Cited by 36 publications

(48 citation statements)

References 17 publications

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“…22. As pointed out earlier, 18,23,24 this again indicates that the interface states of HfO 2 / Si structures are governed by the interface between the commonly occurring SiO x interlayer and the silicon crystal. Reference 22 also demonstrates a similar increase of the capture cross sections for holes as that for electrons at energy states approaching the center of the silicon energy band gap.…”

Section: Discussionsupporting

confidence: 59%

“…Similar capture phenomena were recently observed also for Gd 2 O 3 / Si interfaces prepared by molecular beam epitaxy as well as by atomic layer deposition technique. 18 The measured capacitance data were analyzed by using a model where the Fermi level sweeps across the silicon band gap at the interface and where the interface peak observed in the C-V characteristic was represented by one single discrete energy level ⌬G n . This methodology is the same as that in the conductance method.…”

Section: Discussionmentioning

confidence: 99%

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Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Engström

Raeissi

Piscator

2008

Journal of Applied Physics

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Using a method based on the frequency dependence of capacitance, cross sections for electron capture into energy states at the interlayer/silicon interface have been investigated for HfO2 that is deposited on silicon by reactive sputtering. We find that the capture cross sections are thermally activated and steeply increase with increasing energy depth. Both features can be attributed to the same physical origin, indicating vibronic trap properties, where the capture mechanism is governed by multiphonon processes.

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Section: Discussionsupporting

confidence: 59%

Section: Discussionmentioning

confidence: 99%

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Engström

Raeissi

Piscator

2008

Journal of Applied Physics

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“…The typical peaks at 0.2-0.3 eV from the band edges exist also in the case of the high-k materials (Fig. 16) and the mechanism for electron capture is of multiphonon type as earlier found for P b centers at SiO 2 /Si interfaces treated by gamma irradiation [20,21]. This phenomenon was demonstrated to have the same physical background as that leading to an exponential energy dependence of capture cross-sections as shown in Fig.…”

Section: High-k Materialssupporting

confidence: 70%

New Semiconductor Devices

Balestra

2008

Acta Phys. Pol. A

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A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single-and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.

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“…Application of conductance-frequency spectroscopy to characterization of high -oxide/silicon interface and possible nature of interface defects of several high k − k − systems were discussed in [4,[8][9][10]. However, this technique was not commonly used for the study of interface properties in the case when a high leakage current flows through the dielectric film.…”

Section: K −mentioning

confidence: 99%

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Gomeniuk¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Capacitance-voltage ( C-V ) and conductance-frequency () techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high for Al-HfO 2 -Si, Pt-Gd 2 O 3 -Si and Pt-LaLuO 3 -Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor.

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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Cited by 36 publications

References 17 publications

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

New Semiconductor Devices

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

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