High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

Passi, Vikram; Ravaux, Florent; Dubois, Emmanuel; Clavaguera, Simon; Carella, Alexandre; Celle, Caroline; Simonato, Jean‐Pierre; Silvestri, Luca; Reggiani, Susanna; Vuillaume, D.; Raskin, J.-P.

doi:10.1109/led.2011.2146750

Cited by 25 publications

(21 citation statements)

References 15 publications

(22 reference statements)

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“…In a very brief conference proceeding without any sensing data, Lee and co-workers report on the electrical detection of the vapor of DMMP in N 2 using a device with bare SiNWs in a resistor mode [ 57 ]. More interestingly, Simonato and Raskin and co-workers reported a highly sensitive detection of DPCP ( Figure 10a , top) using chemically functionalized silicon nanoribbon FETs [ 54 ] and silicon nanowire FETs [ 59 , 58 ], respectively. In their work, the silicon nanostructures were fabricated and then functionalized by covalent grafting through thermal hydrosilylation of compound 1 onto the HF pre-treated substrates.…”

Section: Gas-phase Sensingmentioning

confidence: 99%

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Cao

Sudhölter

Smet

2013

Sensors

134

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Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed.

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Section: Gas-phase Sensingmentioning

confidence: 99%

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Cao

Sudhölter

Smet

2013

Sensors

134

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“…Moreover, our results shows that DPCP can be distinguish among other related compounds, in complex mixtures or on contaminated materials. We have now developed more sensitive devices [18] that will be integrated in the same prototype, which should lead to a further increase in performances. To our knowledge, this approach represents the first fully integrated portable device for the detection of Sarin-like molecules based on nanotechnologies.…”

Section: Resultsmentioning

confidence: 99%

“…Silicon nanowire-based field-effect transistors (NW-FETs) are well studied structures [8][9][10][11][12] that give rise to powerful sensors for the detection of chemical species in air [13][14][15][16]. For NW sensors operated as FETs, the sensing mechanism is the field-gating effect of charged molecules on the carrier conduction inside the NW [17,18].…”

Section: Introductionmentioning

confidence: 99%

Development of an autonomous detector for sensing of nerve agents based on functionalized silicon nanowire field-effect transistors

Clavaguera

Raoul

Carella

et al. 2011

Talanta

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The ability to detect minute traces of chemical warfare agents is mandatory both for military forces and homeland security. Various detectors based on different technologies are available but still suffer from serious drawbacks such as false positives. There is still a need for the development of innovative reliable sensors, in particular for organophosphorus nerve agents like Sarin. We report herein on the fabrication of a portable, battery-operated, microprocessor-based prototype sensor system relying on silicon nanowire field-effect transistors for the detection of nerve agents. A fast, supersensitive and highly selective detection of organophosphorus molecules is reported. The results show also high selectivity in complex mixtures and on contaminated materials.

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“…It is also used in SOI CMOS ICs with dynamically adjustable threshold voltage ("back-gatecontrolled schemes") [140,141]. Moreover, the effect of the interface coupling has a wide use in SOI-based chemical and biological sensors [142][143][144].…”

Section: Effect Of Interface Coupling and Threshold Voltage In Fully mentioning

confidence: 99%

The advancement of silicon-on-insulator (SOI) devices and their basic properties

Rudenko¹,

Nazarov²,

Lysenko³

2020

SPQEO

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Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal-oxidesemiconductor (CMOS) ICs. It also allows extending the miniaturization of CMOS devices into the nanometer region. In this review paper, we briefly describe evolution of SOI technology and its main areas of application. The basic technological methods for fabrication of SOI wafers are presented. The principal advantages of SOI devices over bulk silicon devices are described. The types of SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) and their basic electrical properties are considered.

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High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

Cited by 25 publications

References 15 publications

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Development of an autonomous detector for sensing of nerve agents based on functionalized silicon nanowire field-effect transistors

The advancement of silicon-on-insulator (SOI) devices and their basic properties

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