2019
DOI: 10.1002/aenm.201903062
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High Energy Density Polymer Dielectrics Interlayered by Assembled Boron Nitride Nanosheets

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Cited by 92 publications
(54 citation statements)
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“…On the contrary, during the growth of electric tree branches, the BNNSs interlayer acts as a barrier or scattering interface in sandwich-structured lm. 27 The breakdown eld strength of PBP/BT@DPA is 414.76 kV mm À1 , which is not much different from P(VDF-HFP). The shape factor b of the lms doped with BNNSs is higher than other samples, in particular, the shape factor b of PBP/BT@DPA is 1.82 times that of pure P(VDF-HFP).…”
Section: Breakdown Characteristics Of Several Lmsmentioning
confidence: 87%
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“…On the contrary, during the growth of electric tree branches, the BNNSs interlayer acts as a barrier or scattering interface in sandwich-structured lm. 27 The breakdown eld strength of PBP/BT@DPA is 414.76 kV mm À1 , which is not much different from P(VDF-HFP). The shape factor b of the lms doped with BNNSs is higher than other samples, in particular, the shape factor b of PBP/BT@DPA is 1.82 times that of pure P(VDF-HFP).…”
Section: Breakdown Characteristics Of Several Lmsmentioning
confidence: 87%
“…As reported in the literature, BNNSs were prepared by ultrasonic degradation method with a yield of 2.5-3%. 27,29 The experimentally collected BNNSs were 60 mg, and the acquisition rate was within the normal range. The experimental results preliminary indicated that h-BN was stripped successfully.…”
Section: Methodsmentioning
confidence: 99%
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“…In this context, the subsurface interstitial hydrogen atoms provide a new way for fine-tuning the chemical reactivity of Pd surface, in particular for catalytic reactions during which Pd binds with the reaction intermediates too strongly (such as the oxygen reduction reaction and carbon dioxide reduction). [15] In conclusion, we have imaged the interstitial hydrogen atoms at the near surface region of octahedral PdH x NPs by using the newly developed dDPC and iDPC STEM techniques. The absorbed hydrogen occupies the T-site interstices at the near surface, while the occupation gradually changes to the O-site in the bulk.…”
mentioning
confidence: 97%