High Electron Mobility and Ambipolar Transport in Organic Thin‐Film Transistors Based on a π‐Stacking Quinoidal Terthiophene

Chesterfield, Reid J.; Newman, Christopher R.; Pappenfus, Ted M.; Ewbank, Paul C.; Haukaas, Michael H.; Mann, Kent R.; Miller, Larry L.; Frisbie, C. Daniel

doi:10.1002/adma.200305200

Cited by 296 publications

(179 citation statements)

References 24 publications

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“…Ambipolar transport (i.e. encompassing both n-and p-types) was successfully achieved in a thin-film transistor using a quinoid oligothiophene derivative (Casado et al 2002(Casado et al , 2003Pappenfus et al 2002a,b;Chesterfield et al 2003).…”

Section: Introductionmentioning

confidence: 99%

Hole-vibronic coupling in oligothiophenes: impact of backbone torsional flexibility on relaxation energies

Filho

Coropceanu

Fichou

et al. 2007

Phil. Trans. R. Soc. A.

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Density functional theory calculations together with highly resolved gas-phase ultraviolet photoelectron spectroscopy have been applied to oligothiophene chains with up to eight thiophene rings. One of the important parameters governing the charge transport properties in the condensed phase is the amount of energy relaxation upon ionization. Here, we investigate the impact on this parameter of the backbone flexibility present in oligothiophenes as a result of inter-ring torsional motions. With respect to oligoacenes that are characterized by a coplanar and rigid backbone, the torsional flexibility in oligothiophenes adds to the relaxation energy and leads to the broadening of the first ionization peak, making its analysis more complex.

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Section: Introductionmentioning

confidence: 99%

Hole-vibronic coupling in oligothiophenes: impact of backbone torsional flexibility on relaxation energies

Filho

Coropceanu

Fichou

et al. 2007

Phil. Trans. R. Soc. A.

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“…However, despite these promising preliminary results there is still a drawback associated with most ambipolar OFETs reported to date, which is the relatively low carrier mobility. [7][8][9][10] For example, in the work by Meijer et al the maximum ambipolar carrier mobilities reported were in the order of 10 −5 cm 2 /V s (for both electrons and holes) for narrow band gap based polymeric OFETs, and 10 −5 cm 2 /V s (electrons) 10 −3 cm 2 /V s (holes) for OFETs based on polymer-small molecule interpenetrating networks. 7 Moreover, Dodabalapur et al have observed that the electron mobility in ambipolar OFETs employing an organic heterostructure of C 60 / ␣-6T is lower by a factor of 16 when compared with the electron mobility measured in pristine C 60 OFETs.…”

mentioning

confidence: 99%

Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors

Anthopoulos

Leeuw

Cantatore

et al. 2004

Applied Physics Letters

182

106

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We demonstrate a complementary-like inverter comprised of two identical ambipolar field-effect transistors based on the solution processable methanofullerene [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM). The transistors are capable of operating in both the p-and n-channel regimes depending upon the bias conditions. However, in the p-channel regime transistor operation is severely contact limited. We attribute this to the presence of a large injection barrier for holes at the Au/PCBM interface. Despite this barrier the inverter operates in both the first and third quadrant of the voltage output versus voltage input plot exhibiting a maximum gain in the order of 20. Organic field-effect transistors (OFETs) are currently the focus of intense research efforts in numerous academic and industrial research laboratories around the world. Over the past decade OFETs have emerged as promising candidates for electronic device applications requiring low cost and large area coverage, mechanical flexibility, and low temperature processing. 1 Several groups have demonstrated OFETbased circuits with performances sufficient for practical applications. Few examples of such applications include switching devices for flat panel displays 2-4 and integrated circuits. [4][5][6] To date the largest organics-based electronic circuit reported is the standard logic based 32-stage shift registers that consists of 1888 transistors capable of operating at a frequency of 5 kHz. 4 As the number of transistors per circuit increases there is an increasing need for circuits characterized by low power dissipation, high noise margin, and greater operation stability. In silicon-based microelectronics such requirements are met through the use of complementary metal-oxide-semiconductor (CMOS) logic where an n-and a p-type transistor are combined to built logic circuits. Indeed, examples of organic CMOS logic have show that it is possible to make large-scale integrated circuits (up to 864 transistors per circuit) with much lower power dissipation. 6 In the work by Crone et al., however, the transistor channels had to be spatially separated in order to facilitate the separate vacuum deposition of the two semiconductors (an n-and a p-type), thus making circuit fabrication difficult and potentially expensive.Recently an alternative approach towards organic CMOS circuits has been proposed. 7 In their work Meijer et al. have demonstrated that by employing identical ambipolar OFETs based on polymer-small molecule interpenetrating networks as well as narrow band gap polymers, CMOS-like voltage inverters can be fabricated. This approach makes full use of the attractive processing properties of polymers while it simplifies device fabrication by utilizing a single semiconductor layer. However, despite these promising preliminary results there is still a drawback associated with most ambipolar OFETs reported to date, which is the relatively low carrier mobility. [7][8][9][10] For example, in the work by Meijer et al. the maximum ambipolar carrier mobilities...

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“…1 Only very recently has ambipolar device operation been reported in field-effect transistors ͑FETs͒ based on a few different single-component 2 organic molecular semiconductors. [3][4][5][6] Some of these ambipolar devices have been used to realize inverter circuits that demonstrate the possibility of implementing complementary metal-oxide-semiconductor ͑CMOS͒ technology. 7 Since CMOS technology is the most efficient strategy toward the fabrication of integrated circuits with better noise margins ͑i.e.…”

mentioning

confidence: 99%

Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

Boer¹,

Stassen²,

Craciun³

et al. 2005

Applied Physics Letters

125

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We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper-and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3 cm 2 / V s in both materials. The highest mobility for electrons is observed for iron-phthalocyanines and is approximately one order of magnitude lower. Our measurements indicate that these values are limited by extrinsic contact effects due to the transistor fabrication and suggest that considerably higher values for the electron and hole mobility can be achieved in these materials.

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High Electron Mobility and Ambipolar Transport in Organic Thin‐Film Transistors Based on a π‐Stacking Quinoidal Terthiophene

Cited by 296 publications

References 24 publications

Hole-vibronic coupling in oligothiophenes: impact of backbone torsional flexibility on relaxation energies

Hole-vibronic coupling in oligothiophenes: impact of backbone torsional flexibility on relaxation energies

Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors

Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

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