1992
DOI: 10.1016/0022-0248(92)90916-7
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High efficiency thin film CdS/CdTe heterojunction solar cells

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Cited by 18 publications
(6 citation statements)
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“…102 The theoretical efficiency limit for cells with the CdTe room temperature band gap (1.5 eV) is 30%. [103][104][105] However, a practical efficiency of 18.5% could be expected for this material with a V oc of 0.88 V and J sc of 270 A m À2 (with a negligibly thin CdS). 106 The maximum photocurrent available from a CdTe cell under the global spectrum normalized to 100 mW cm À2 is 30.5 mA cm À2 .…”
Section: +mentioning
confidence: 99%
“…102 The theoretical efficiency limit for cells with the CdTe room temperature band gap (1.5 eV) is 30%. [103][104][105] However, a practical efficiency of 18.5% could be expected for this material with a V oc of 0.88 V and J sc of 270 A m À2 (with a negligibly thin CdS). 106 The maximum photocurrent available from a CdTe cell under the global spectrum normalized to 100 mW cm À2 is 30.5 mA cm À2 .…”
Section: +mentioning
confidence: 99%
“…Both individual metal sulfides are challenging materials for solar power engineering. Cadmium sulfide proved to be a suitable material for use as a window layer in solar radiation converters: CdTe/CdS [7][8][9] and CIGS/CdS [10]. Lead sulfide is effectively used as an absorbing material [11].…”
Section: Introductionmentioning
confidence: 99%
“…CdS is an important material due to its novel properties like photoconductivity, high index of refraction (2.5) and its high electron affinity [5,6]. Several techniques like vacuum evaporation, sputtering, electro-deposition, radio frequency, pulsed laser evaporation, molecular beam epitaxy (MBE), metal vapour organic deposition (MOCVD), spray pyrolysis deposition (SPD), close spaced sublimation (CSS), successive ionic layer adsorption and reaction (SILAR), Micelle method and chemical bath deposition (CBD) are being used to develop CdS thin films.…”
Section: Introductionmentioning
confidence: 99%