High-density high-reliability tungsten interconnection by filled interconnect groove metallization

Broadbent, E. K.; Flanner, J. M.; Hoek, W. G. M. van den

doi:10.1109/16.3350

Cited by 20 publications

(8 citation statements)

References 4 publications

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“…Tungsten has been used for metal interconnection and contact formation. Many candidate metals have been developed to replace tungsten; however, tungsten is still standard metal for sub 14 nm contact formation due to its excellent electromigration and diffusion barrier performance [3,38]. The CMP mechanism of tungsten was proposed by Kaufmann firstly [39].…”

Section: Abrasive For Tungsten Cmpmentioning

confidence: 99%

“…Moreover, due to the surface charge difference between alumina and tungsten at acidic region, attractive force retains alumina abrasive on the wafer surface. Recently, composite alumina abrasive with polymeric material has been introduced in the industry due to defect concern at advanced node semiconductor [38]. Silica base slurry utilization on tungsten CMP is usually for non-selective CMP purpose (polishing both tungsten and dielectric material) because its selectivity with oxide is not as high as alumina abrasive slurry.…”

Section: Abrasive For Tungsten Cmpmentioning

confidence: 99%

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Abrasive for Chemical Mechanical Polishing

Kim¹

2018

Abrasive Technology - Characteristics and Applications

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Chemical mechanical polishing (CMP) is one of the most essential processes in semiconductor manufacturing. Its importance becomes highly underscored at the advanced device toward sub 14 nm scaling. The fundamental mechanism of CMP is to create soften surface layer by chemical reaction and then, mechanical force by abrasive particles remove soften layer. The role of CMP is not only material removal, but also planarization, surface smoothening, uniformity control, defect reduction and more. Moreover, semiconductor yield enhancement is sensitively influenced by CMP processing. Surface scratching, which is generated by CMP in nature, is considered as 'killer defect' in semiconductor manufacturing. Hence, to achieve proper CMP performance without surface scratching, understanding and development of abrasive particles are crucially important. In this chapter, CMP fundamentals, applications and challenges associated with abrasive particle technology including synthesis (up to nanoparticle scale), tribochemical reaction, abrasive surface zeta potential behavior, particle size and its distribution will be discussed.

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Section: Abrasive For Tungsten Cmpmentioning

confidence: 99%

Section: Abrasive For Tungsten Cmpmentioning

confidence: 99%

Abrasive for Chemical Mechanical Polishing

Kim¹

2018

Abrasive Technology - Characteristics and Applications

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“…In the case of SiOj, a pure CVD process Here, the difficult process element is filling the spaces in the dielectric with metal. Broadbent [10] and others have used chemical vapor deposition (CVD) of tungsten to fill both defined slots (for lines) and via holes; subsequently excess tungsten was etched from the topmost surface. A hybrid process is illustrated in Figure 7.…”

Section: Individual Processesmentioning

confidence: 99%

On-chip wiring for VLSI: Status and directions

Small

Pearson

1990

IBM J. Res. & Dev.

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“…Tungsten deposition provides good step coverage, which has less electromigration failure, high resistance to electromigration, high mean time to failure under stress, low resistance and good compatibility with titanium nitride barrier material. [1][2][3] The demand for global planarization with minimal tungsten recess has called for the chemical mechanical polishing (CMP) process to be used for interconnects such as plug, via and trench. [3][4][5] And tungsten CMP technologies, including equipment and consumables, have been developed to achieve contact requirement according to device shrinkage.…”

mentioning

confidence: 99%

Study on the Mechanism of Nano-Flake Defect during Tungsten Contact Chemical Mechanical Polishing

Kim

Lawyer²,

Egan

et al. 2018

ECS J. Solid State Sci. Technol.

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Tungsten chemical mechanical polishing (CMP) has been used for metal interconnect formation in semiconductor manufacturing for a long time. Its application continues to the advanced device manufacturing with transistor scaling. However, the defect concerns of the tungsten CMP process have become critical to manufacturing such as metal flake defects that can cause electrical shorts between contacts. Although there are many published studies on tungsten CMP fundamentals, process applications and CMP-induced defects, the mechanism of thin metal flake formation in nanoscale (nano-flake defect) has not been clearly known to industry. In this study, nano-flake defects are identified after tungsten contact CMP, and mechanism of its formation is explored. Significant CMP dishing at wide contact area removes all tungsten and open barrier metal. Friction force by 3-body interaction among wafer, abrasive particle and pad asperity breaks the adhesion of barrier material from intermetallic dielectric material. And it allows re-deposition of barrier metal to the wafer surface. Insufficient CMP in-situ cleaning results in residual nano-flake defects at the end of CMP process. Analysis of device macros, thickness of flake, cross sectional analysis by transmission electron microscope (TEM) and topographical analysis support this suggested mechanism.

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High-density high-reliability tungsten interconnection by filled interconnect groove metallization

Cited by 20 publications

References 4 publications

Abrasive for Chemical Mechanical Polishing

Abrasive for Chemical Mechanical Polishing

On-chip wiring for VLSI: Status and directions

Study on the Mechanism of Nano-Flake Defect during Tungsten Contact Chemical Mechanical Polishing

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