Heterogeneously integrated III–V/Si MOS capacitor Mach–Zehnder modulator

Hiraki, Tatsurou; Aihara, Takuma; Hasebe, Koichi; Takeda, Koji; Fujii, T.; Kakitsuka, Takaaki; Tsuchizawa, Tai; Fukuda, Hiroshi; Matsuo, Shinji

doi:10.1038/nphoton.2017.120

Cited by 137 publications

(84 citation statements)

References 26 publications

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“…[106]). Similarly, an InGaAsP membrane bonded on 10 nm SiO 2 on an n-doped Si waveguide core has both high modulation efficiency and high speed [105]. With this configuration, a 3 dB modulation bandwidth of 2 GHz and a data rate of 32 Gb s −1 with V π L = 0.9 V mm were reported [105].…”

Section: Graphene-based Modulatorsmentioning

confidence: 96%

“…In Fig. 3b, we compare the FOM of graphene modulators with those of p-n junction Si modulators, Si-insulator-Si modulators [104] (black curve) and InGaAsP membranes on Si (refs [105,106]). The points are experimental data taken from literature, whereas the lines are theoretical estimations for optimized modulator parameters.…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

“…Single or double SLG electro-absorption modulators can also be used as electro-refractive modulators, for example, in a MZI modulator with SLG phase shifters on its two arms [70,77]. The FOM PM for SLG-based electrorefractive modulators is about ten times higher than that for Si-based phase modulators when μ of SLG is high (τ > 100 fs), comparable to that of InGaAsP (refs [105,106]). This higher FOM PM is a result of the combination of the large electro-refractive effect, V π L, and low α loss .…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

“…Similarly, an InGaAsP membrane bonded on 10 nm SiO 2 on an n-doped Si waveguide core has both high modulation efficiency and high speed [105]. With this configuration, a 3 dB modulation bandwidth of 2 GHz and a data rate of 32 Gb s −1 with V π L = 0.9 V mm were reported [105]. The InGaAsP-thin-oxide-Si stack exploits the capacitor concept first used in the Si-insulator-Si capacitor (SISCAP) [93], with the advantage of replacing the lossy poly-Si top layer with a highly efficient electro-refractive n-doped InGaAsP membrane [105,106].…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

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Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

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Section: Graphene-based Modulatorsmentioning

confidence: 96%

Section: Graphene-based Modulatorsmentioning

confidence: 99%

Section: Graphene-based Modulatorsmentioning

confidence: 99%

Section: Graphene-based Modulatorsmentioning

confidence: 99%

See 2 more Smart Citations

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

View full text Add to dashboard Cite

show abstract

“…A variety of EO-functional materials, such as graphene 24,25 , III-V materials 26 and transparent conductive oxides (TCO) 27,28 have been investigated for EO modulation. Here we select Indiumtin-oxide (ITO) as the EO material and integrate an ITO-oxide-ITO capacitive gate-stack atop a silicon photonic waveguide to form an all-photonic optical mode.…”

Section: Introductionmentioning

confidence: 99%

Coupling-enhanced dual ITO layer electro-absorption modulator in silicon photonics

Tahersima

Gui

et al. 2019

Nanophotonics

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Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However, the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits on-chip scaling density. To address these limitations, here we experimentally demonstrate a coupling-enhanced electroabsorption modulator by heterogeneously integrating a novel dual-gated indium-tin-oxide (ITO) phase-shifting tunable absorber placed at a silicon directional coupler region. Our experimental modulator shows a 2 dB extinction ratio for a just 4 µm short device at 4 volt bias. Since no material nor optical resonances are deployed, this device shows spectrally broadband operation as demonstrated here across the entire C-band. In conclusion we demonstrate a modulator utilizing strong index-change from both real and imaginary part of active material enabling compact and high-performing modulators using semiconductor foundry-near materials.

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Fast and Energy‐Efficient Non‐Volatile III‐V‐on‐Silicon Photonic Phase Shifter Based on Memristors

Fang,

Tossoun,

Descos

et al. 2023

Advanced Optical Materials

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Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next‐generation data centers and high‐performance computing. Recently, programmable silicon photonics has also found new applications in quantum and classical information processing. A key component of programmable silicon photonic integrated circuits (PICs) is the phase shifter, traditionally realized via thermo‐optic or free‐carrier effects that are weak, volatile, and power hungry. A non‐volatile phase shifter can circumvent these limitations by requiring zero power to maintain the switched phases. Previously non‐volatile phase modulation is achieved via phase‐change or ferroelectric materials, but the switching energy remains high (pico to nano joules) and the speed is slow (micro to milliseconds). Here, a non‐volatile III‐V‐on‐silicon photonic phase shifter based on a HfO2 memristor with sub‐pJ switching energy (≈400 fJ), representing over an order of magnitude improvement in energy efficiency compared to the state of the art, is reported. The non‐volatile phase shifter can be switched reversibly using a single 100 ns pulse and exhibits excellent endurance over 800 cycles. This technology can enable future energy‐efficient programmable PICs for data centers, optical neural networks, and quantum information processing.

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Heterogeneously integrated III–V/Si MOS capacitor Mach–Zehnder modulator

Cited by 137 publications

References 26 publications

Graphene-based integrated photonics for next-generation datacom and telecom

Graphene-based integrated photonics for next-generation datacom and telecom

Coupling-enhanced dual ITO layer electro-absorption modulator in silicon photonics

Fast and Energy‐Efficient Non‐Volatile III‐V‐on‐Silicon Photonic Phase Shifter Based on Memristors

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