2009
DOI: 10.1016/j.nima.2008.12.188
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Hard X-ray photoemission spectroscopy

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Cited by 192 publications
(95 citation statements)
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“…In response to the need for a bulk-sensitive electronic structure probe, hard x-ray photoelectron spectroscopy (HAXPES) was recently developed as the highphoton energy variant of the well-established photoemission technique, where the photoelectron energy is extended up to several keV. 12,13 The average depth of photoelectron emission is primarily controlled by the inelastic mean free path (IMFP) which is found to increase as about (E kin ) 3/4 for electron energies exceeding about 1 keV, and thus reaches up to typically 10 nm at 10 keV for most systems. 14,15 This not only allows direct access to the bulk electronic structure of buried films, but also enables a depth profiling of their chemical homogeneity, which is not possible with conventional photoelectron spectroscopy (PES) at 1 keV or less.…”
Section: Introductionmentioning
confidence: 99%
“…In response to the need for a bulk-sensitive electronic structure probe, hard x-ray photoelectron spectroscopy (HAXPES) was recently developed as the highphoton energy variant of the well-established photoemission technique, where the photoelectron energy is extended up to several keV. 12,13 The average depth of photoelectron emission is primarily controlled by the inelastic mean free path (IMFP) which is found to increase as about (E kin ) 3/4 for electron energies exceeding about 1 keV, and thus reaches up to typically 10 nm at 10 keV for most systems. 14,15 This not only allows direct access to the bulk electronic structure of buried films, but also enables a depth profiling of their chemical homogeneity, which is not possible with conventional photoelectron spectroscopy (PES) at 1 keV or less.…”
Section: Introductionmentioning
confidence: 99%
“…10,11 By increasing the photon and thus the electron kinetic energy from the conventional soft x-ray region ($1 keV) into the multi-keV regime, the probing depth, which is dependent on the inelastric mean free path (IMFP) of the photoelectrons, can be significantly increased to several nanometers. 12 This permits electronic structure studies of such complex oxides that are not limited to the surface region. 13,14 In this article, we thus use hard x-ray photoelectron spectroscopy (HAXPES) to non-destructively investigate the electronic properties of deeply buried, doped layers, in particular La-doped STO films grown on (001) STO single crystals by MBE.…”
mentioning
confidence: 99%
“…1 In the last decade, HAXPES have been applied to various research fields, such as electronic devices, inorganic and organic materials, and rechargeable batteries. 2 In the BL46XU at SPring-8, two HAXPES systems equipped with different electron spectrometers, i.e., VG-SCIENTA R4000-10keV and FOCUS HV-CSA 300/15 have been served for the industrial researches.…”
Section: Introductionmentioning
confidence: 99%