Growth Technology of III‐V Single Crystals for Production

Comparative study on residual strain and thermal stress in 4-in GaAs crystals grown by LEC and VB techniques

“…LEC is one of the most traditional growth techniques of GaAs single crystals [3]. GaAs melt filled in a crucible is encapsulated by boric oxide and is pressurized by nitrogen or argon gas with the pressure of 1-2 MPa to suppress dissociation of molten GaAs.…”

“…VB and vertical gradient freeze (VGF) are expected as the growth techniques of large diameter GaAs single crystals with low dislocation density [2,3]. GaAs melt is fully encapsulated by boric oxide, or sealed in a fused silica ampoule to suppress decomposition of GaAs melt.…”

“…Problem of slip-line generation during the epitaxial growth or annealing process after ion implantation is becoming more remarkable in large diameter wafer process. The authors have reported that vertical Bridgman (VB)-grown GaAs substrates with low residual strain showed higher resistance against slip-line generation than liquid encapsulated Czochralski (LEC)-grown GaAs substrates with high residual strain, and have suggested that the residual strain in GaAs substrates might be one of the causes of the slip-line generation [1,2].…”

Vertical Bridgman Growth of Binary Compound Semiconductors

“…M. Tatsumi and K. Fujita [32] reported the situation of the "melt growth of GaAs single crystals" up to 1998. Chapters devoted to Bridgman growth of III-Vs can be also found in Refs [33][34][35][36][37][38][39][40] and to the II-VIs in Refs [41][42][43].…”