Growth of zinc oxide thin films and nanostructures by wet oxidation

Li, Zhengwei; Gao, Wei

doi:10.1016/j.tsf.2006.09.026

Cited by 33 publications

(24 citation statements)

References 20 publications

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“…They possess several interesting properties such as optical transparency, electrical conductivity, piezoelectricity, nontoxicity, wide availability, low cost and chemical stability [3][4][5] . ZnO is used as transparent electrodes, photocatalysts, energy saving coating materials for window glasses, acousto-optic devices, ferroelectric memories, reduction gas detection sensors 6 and solar cells 7 . So far, ZnO-based thin films have been prepared by many different techniques based on vacuum deposition and solution-based processes 8 .…”

Section: Introductionmentioning

confidence: 99%

Morphological, Structural and Optical Properties of ZnO Thin Films Deposited by Dip Coating Method

et al. 2016

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Zinc oxide (ZnO) thin films were deposited on glass substrat by dip coating technique. The effects of sol aging time on the deposition of ZnO films was studied by using the field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and optical transmission techniques. The morphology of the films strongly depends on preparation route and deposition technique. It is noteworthy that films deposited from the freshly prepared solution feature indistinct characteristics; had relatively poor crystalline quality and low optical transmittance in the visible region. The increase in sol aging time resulted in a gradual improvement in crystallinity (in terms of peak sharpness and peak intensity) of the hexagonal phase for all diffraction peaks. Effect of sol aging on optical transparency is quite obvious through increased transmission with prolonged sol aging time. Interestingly, 72-168 h sol aging time was found to be optimal to achieve smooth surface morphology, good crystallinity and high optical transmittance which were attributed to an ideal stability of solution. These findings present a better-defined and more versatile procedure for production of clean ZnO sols of readily adjustable nanocrystalline size.

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Section: Introductionmentioning

confidence: 99%

Morphological, Structural and Optical Properties of ZnO Thin Films Deposited by Dip Coating Method

et al. 2016

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“…Growth can only be possible when Zn ions have extra energy to migrate to the oxide|air interface forming ZnO at this front. It has been accepted that the self-diffusion co-efficient of Zn ions in ZnO is much larger than oxygen ions at lower temperature regimes [15,16]. Assuming that the diffusion mechanism is via a vacancy mechanism, Nakamura et al has suggested that a temperature of 150 • C is far too low for the Zn ions to diffuse through the initial oxidation layer [17].…”

Section: Structural and Morphological Propertiesmentioning

confidence: 99%

Oxidation of etched Zn foil for the formation of ZnO nanostructure

Tan

Razak

Ibrahim

et al. 2011

Journal of Alloys and Compounds

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“…It is also a singular element with outstanding physical characteristics, being a unique material exhibiting semiconducting and piezoelectric dual properties [2,3]. In addition, a very rich family of ZnO nanostructures, both in structures and in properties [4], can be synthesized under distinct growth methods and conditions [5][6][7][8]. Novel potential applications in optoelectronics, transducers, varistors, gas sensors, transparent ultraviolet protection films and biomedical sciences have been demonstrated [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO nanostructures on Si by means of plasma immersion ion implantation and deposition

Oliveira

Vieira

Ueda

et al. 2013

Vacuum

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Crystalline zinc oxide (ZnO) nanostructures have been grown on Si substrates by means of Plasma Based Ion Implantation and Deposition (PIII&D) at temperature of about 300 0 C and in the presence of an argon glow discharge. In the process a crucible filled with small pieces of metallic zinc plays the role of the anode of the discharge itself, being polarized by positive DC voltage of about 400V. Electrons produced by thermionic emission by an oxide cathode (Ba, Sr, Ca)O impact this crucible, causing its heating and vaporization of Zn. Partial ionization of Zn atoms takes place due to collisions with plasma particles. High negative voltage pulses (7 kv/40μs/250Hz) applied to the sample holder cause the implantation of metallic zinc into Si surface, while Zn deposition happens between pulses. After annealing at 700 0 C, strong UV and various visible photoluminescence bands are observed at room temperature, as well as the presence of ZnO nanoparticles. The coated surface was characterized in detail using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. XRD indicated the presence of only ZnO peaks after annealing. The composition analysis by EDS revealed distinct Zn/O stoichiometry relation depending on the conditions of the process. AFM images showed the formation of columns in the nanoscale range. Topography viewed by SEM showed the formation of structures similar to cactus with nanothorns. Depth analysis performed by XPS indicated an increase of concentration of metallic Zn with increasing depth and the exclusive presence of ZnO for outer regions. PIII&D allowed to growing nanostructures of ZnO on Si without the need of a buffer layer.

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Growth of zinc oxide thin films and nanostructures by wet oxidation

Cited by 33 publications

References 20 publications

Morphological, Structural and Optical Properties of ZnO Thin Films Deposited by Dip Coating Method

Morphological, Structural and Optical Properties of ZnO Thin Films Deposited by Dip Coating Method

Oxidation of etched Zn foil for the formation of ZnO nanostructure

Growth of ZnO nanostructures on Si by means of plasma immersion ion implantation and deposition

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