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Cited by 12 publications
(12 citation statements)
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“…Hence, we propose the increasing and eventually decreasing co-deposit distance to originate from different volumetric growths in forward direction, where increased volume leads to an increasing co-deposit distance and vice versa. Very similar processes have been observed before for focused ion beam induced deposition (FIBID), which became particularly evident for very small and even negative inclination angles (equivalent to low doses) [26,27]. The responsible mechanism is explained by two competing processes.…”
Section: Part I-diving Board Investigationsupporting
confidence: 72%
See 2 more Smart Citations
“…Hence, we propose the increasing and eventually decreasing co-deposit distance to originate from different volumetric growths in forward direction, where increased volume leads to an increasing co-deposit distance and vice versa. Very similar processes have been observed before for focused ion beam induced deposition (FIBID), which became particularly evident for very small and even negative inclination angles (equivalent to low doses) [26,27]. The responsible mechanism is explained by two competing processes.…”
Section: Part I-diving Board Investigationsupporting
confidence: 72%
“…To further delay co-deposition, a simple method was applied to compensate for the effect of EBIH, i.e., the steadily decreasing precursor coverage at the deposition site. Basically, the patterning velocity must be reduced such that the reduced precursor coverage ensures stable and constant growth rates [ 17 , 27 , 30 ]. A number of elaborate strategies have been proposed already, which usually require calibration structures or simulation results as an input.…”
Section: Part Ii-helix Fabricationmentioning
confidence: 99%
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“…Focused particle-beam-induced deposition utilizes either i ons (F I BID) or e lectrons (F E BID) that chemically dissociate physisorbed precursor molecules, whereas nonvolatile decomposition products remain on the surface forming the intended deposit. While FIBID has faster growth rates, the application of electrons eliminates unwanted sputtering, ion implantation, or significant substrate heating. Furthermore, FEBID allows the fabrication of freestanding features in the sub-50 nm regime, while it is complicated to go below 150 nm using traditional liquid Ga + FIBID .…”
Section: Introductionmentioning
confidence: 99%
“…(Plank, et al, 2008) (c) Horizontally grown DLC wire by feedback of monitored secondary electron current signal to maintain stable growth angle. (Guo, et al, 2013) d) Pt icosahedron fabricated with simulation-guided FEBID. (Fowlkes, et al, 2016)…”
Section: Metalsmentioning
confidence: 99%