Growth of strain relaxed Si1−yCy films using SOI substrates

Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

“…However, most of the previous studies were focused on pseudomorphic growths on Si substrate, and there have been only a limited number of investigations on the strain relaxation process during the heteroepitaxial growths of Si 1 À x C x crystalline films [15,22,23]. In this paper, we report on the growth temperature dependence of the lattice strain and crystalline morphology in Si/Si 1 À x C x /Si(100) heterostructures formed by gas-source MBE.…”

“…Methods to grow Si 1 À x C x alloys using molecular beam epitaxy (MBE)-based techniques [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23], chemical vapor deposition (CVD) [11,[24][25][26][27][28][29][30], and solid phase epitaxy (SPE) [27,31,32] have been extensively studied. However, most of the previous studies were focused on pseudomorphic growths on Si substrate, and there have been only a limited number of investigations on the strain relaxation process during the heteroepitaxial growths of Si 1 À x C x crystalline films [15,22,23].…”