volume 106, issue 2, P657-665 1981
DOI: 10.1002/pssb.2221060231
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Abstract: A method for growing CdF,:Ln3+ crystals (Ln lanthanide) is presented which results in semiconducting samples without any subsequent annealing. It is found that the main preparation parameters act on the optical and transport properties through a common parameter E,. The infra-red absorption of the samples as well as their conductivity are then analysed in the frame of a model with impurity-banding and hopping conductivity, resulting in informations on the impurity density of states.Nous prhsentons une m6thode…

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