Growth of sapphire crystals for optoelectronics from alumina in a protective medium

Dan’ko, A. Ya.; Nizhankovskiy, S. V.; Puzikov, V. M.; Grin, L. A.; Sidelnikova, N. S.; Adonkin, G. T.; Kanishchev, V. N.

doi:10.1134/s1063774508070304

Cited by 7 publications

(3 citation statements)

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“…The first thermal unit design contains only metallic materials-those being tungsten and molybdenum. The second type of thermal unit was originally designed for sapphire crystal growth by our research partner [13,17] and it additionally uses graphite materials as part of its design update. Graphite materials are less expensive while being easier to work with and to machine, allowing for a better thermal field control inside the thermal unit.…”

Section: Spectral Characteristics Color Centers and Heat Treatment mentioning

confidence: 99%

Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method

Kajan

Volkov

Damazyan³

et al. 2020

Crystal Research and Technology

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The research conducted herein builds upon the achievement of a successful and stable 170 × 300 × 35 mm YAG and 5% Yb:YAG single‐crystals production via the horizontal directed crystallization method. Based on the analysis of residual birefringence pattern in analyzed ingots, a hypothesis is proposed—debating that in certain stages of the growth, {211} facets start to form within some sections of the crystallization front. The sensitivity of the {211} facets to temperature fluctuations seems to cause striations in the facets’ growth sectors. In a later stage of the growth process the slope of the crystallization front naturally changes, which seems to reduce the formation of facets considerably. As a result, the rear part of the crystal achieves the best optical quality. The samples extracted from that portion of the ingot, after annealing, possess good optical quality and heat release of 0.004 1/m at 1070 nm, which is quite low, and is considered a good result for the garnet family of crystals. The lasing experiment with thin‐disk geometry shows a slope efficiency of 52% and proves that the material is suitable for high‐power lasers application.

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Section: Spectral Characteristics Color Centers and Heat Treatment mentioning

confidence: 99%

Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method

Kajan

Volkov

Damazyan³

et al. 2020

Crystal Research and Technology

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“…When designing filters, researchers mainly take into account recommendations [ 11 , 12 ]. They study the crystallization processes of filter lining materials [ 13 , 14 , 15 , 16 ], as well as the optical properties of their coatings [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

Optical and Mechanical Properties of Layered Infrared Interference Filters

Bembenek

Маковійчук

Shatskyi

et al. 2022

Sensors

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The design and manufacturing technology of interference-absorbing short-wave filters based on a layered composition of Si–SiO on a sapphire substrate of various shapes was developed. A transition layer of SiO was applied to the surface of the substrate, alternating with layers of Si–SiO with an odd number of quarter-wave layers of materials with high (Si) and low refractive indices (SiO), and the application of an outer layer of SiO as an appropriate control of the materials’ thickness. The optical properties of the infrared light filter were studied. It was established that the created design of the light filter provides the minimum light transmission in the visible region of the spectrum from 0.38 to 0.78 µm and the maximum in the near infrared region from 1.25 to 5 µm and has stable optical indicators. A method for studying the stress–strain state and strength of a multilayer coating of a light filter under the action of a local arbitrarily oriented load was developed. For simplicity in the analysis and for obtaining results in the analytical form, the one-dimensional model of the configuration “multilayer covering—firm substrate” constructed earlier by authors was used. From a mechanical point of view, the upper protective layer of the multilayer coating was modeled by a flexible plate, and the inner operational composite N-layer was subjected to Winkler’s hypothesis about the proportionality of stresses and elastic displacements.

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“…As a rule, such aggregations of inclusions are formed in the cross‐section of crystals and decorate the CF. However, at the growth of massive crystals (plates with a thickness ≥ 30 mm) by the method of horizontal directed crystallization (HDC) may form longitudinal aggregation of inclusions . This aggregation is located along the direction of crystal growth and has a domelike shape (figure ).…”

Section: Introductionmentioning

confidence: 99%

Formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium‐aluminum garnet grown by horizontal directed crystallization method

Nizhankovskyi

Tan'ko

Sidelnikova

et al. 2015

Crystal Research and Technology

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It is shown that the formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium-aluminum garnet (YAG) grown by the method of HDC is caused by local accumulation of impurities, disturbance of morphological stability of the crystallization front and capture of inclusions and impurities in the nodal region of the melt two-vortex convection. Studied is the influence of thermal and geometrical parameters of the melt and the shape of the crystallization front on the conditions of the formation of the capture of inclusions.

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Growth of sapphire crystals for optoelectronics from alumina in a protective medium

Cited by 7 publications

References 0 publications

Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method

Fabrication and Characterization of High‐Dimension Single‐Crystal Yb:YAG Ingots Grown by Horizontal Directed Crystallization Method

Optical and Mechanical Properties of Layered Infrared Interference Filters

Formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium‐aluminum garnet grown by horizontal directed crystallization method

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