2022
DOI: 10.1016/j.mssp.2021.106318
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Growth of low-cost and high-quality monocrystalline silicon ingots by using split recycled seeds

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Cited by 5 publications
(3 citation statements)
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“…Although the recycled seed could generate extra initial defects, however, it becomes influential for solar cell performance only when defect concentration reaches a certain level, that is, the influence of dislocation clusters induced by initial defects is neglectable when the wafer height is below 55% and becomes severe at higher positions. [ 107 ] Lei et al [ 108 ] used split recycled seeds to grow CM‐Si. They found that the defect density in the recycled seeds increased significantly but decreased greatly during the seeding and growth.…”
Section: Cost Factorsmentioning
confidence: 99%
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“…Although the recycled seed could generate extra initial defects, however, it becomes influential for solar cell performance only when defect concentration reaches a certain level, that is, the influence of dislocation clusters induced by initial defects is neglectable when the wafer height is below 55% and becomes severe at higher positions. [ 107 ] Lei et al [ 108 ] used split recycled seeds to grow CM‐Si. They found that the defect density in the recycled seeds increased significantly but decreased greatly during the seeding and growth.…”
Section: Cost Factorsmentioning
confidence: 99%
“…Furthermore, the average cell efficiency of the solar cells fabricated by the wafers grown with recycled seeds was only 0.1% different from that of the wafers grown with new seeds. [ 108 ] Therefore, this low‐cost seed recycling method is of great significance for reducing the cost of CM‐Si.…”
Section: Cost Factorsmentioning
confidence: 99%
“…Cast monocrystalline silicon (mono-Si) combines the advantages of low production cost of cast multicrystalline silicon (multi-Si) and high performance of Czochralski mono-Si, which make it a promising solar cell material. [1,2] However, there are still bottlenecks in the fabrication of cast mono-Si, such as the height of low-minority-carrier lifetime areas at the bottom of the cast mono-Si ingot, [2][3][4] which need to be solved by the academic and industrial communities.…”
Section: Introductionmentioning
confidence: 99%