Growth of InAs/InAsSb heterostructured nanowires

Ercolani, Daniele; Gemmi, Mauro; Nasi, L.; Rossi, Francesca; Pea, Marialilia; Li, Ang; Salviati, G.; Beltram, Fabio; Sorba, L.

doi:10.1088/0957-4484/23/11/115606

Cited by 50 publications

(70 citation statements)

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“…The CuPt-type ordering is energetically stable in InAs 0.5 Sb 0.5 [51] and has been experimentally observed under various growth conditions [37][38][39][40][41]. We find that this structure also has the biggest enhancement of the SOS (see Supplementary Material [51]).…”

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confidence: 52%

“…We also find that for the latter the spinorbit energy E SO [36] can be as large as 24 meV. Experimental evidence for the CuPt-ordering of InAs 0.5 Sb 0.5 exists [37][38][39][40][41], and we argue that nanowires of this structure can be grown with molecular beam epitaxy.The SOS of the conduction band in zincblende structures is at most cubic in k around the Γ-point [25]. In both III-V materials, the conduction band has a minimum at Γ and an s-like character dictated by T d symmetry.…”

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confidence: 62%

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Topological Phases inInAs1−xSbx: From Novel Topological Semimetal to Majorana Wire

et al. 2016

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Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transition in these devices on microscopic details makes scaling to a large number of devices difficult unless a material with dominant intrinsic bulk SOI is used. Here we show that wires made of certain ordered alloys InAs1−xSbx have spin splittings up to 20 times larger than those reached in pristine InSb wires. In particular, we show this for a stable ordered CuPt-structure at x = 0.5, which has an inverted band ordering and realizes a novel type of a topological semimetal with triple degeneracy points in the bulk spectrum that produce topological surface Fermi arcs. Experimentally achievable strains can drive this compound either into a topological insulator phase, or restore the normal band ordering making the CuPt-ordered InAs0.5Sb0.5 a semiconductor with a large intrinsic linear in k bulk spin splitting.In recent years, a range of topological phases have been realized in materials, ranging from topological insulators [1, 2] (TIs) and semimetals [3][4][5][6] (TSMs) to superconductors [7, 8] (TSCs). The non-trivial topology of the ground state wavefunctions in these phases causes a variety of phenomena in such materials ranging from topologically protected metallic surface or edge states in TIs [1, 2] and Fermi arcs and anomalous magnetotransport in TSMs [4,[9][10][11], to quasiparticles with nonAbelian particle statistics [12][13][14][15][16][17][18][19] in TSCs, which could be used for topological quantum computation [20,21].Arguably the simplest scheme for realizing nonAbelian statistics in a solid-state device is based on manipulating Majorana zero modes (MZMs) in networks of semiconductor wires. MZMs were predicted to appear at the ends of spin-orbit coupled wires subject to a parallel magnetic field, proximity coupled to an s-wave superconductor. Experimental observations, consistent with the theory, were reported for InAs and InSb zincblende nanowires [19,[22][23][24].The stability of MZMs in such a setup depends greatly on the size of the spin-orbit splitting (SOS) of the conduction band. SOS is very small in bulk zincblende semiconductors [25] and the realization of the MZMs thus relies on the externally induced Rashba SOS [26], which is estimated to be of the order of 1 meV [27,28]. This value is very small compared to the bulk splitting in some recently discovered compounds [29][30][31][32]. However, most of these materials are not suitable for realizing MZMs within the above scenario, while for others such experiments appear to be challenging. It is thus desirable to understand if large values of bulk SOS can be achieved within the III-V materials class, used in most experiments at this time. A bulk SOS dom...

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Topological Phases inInAs1−xSbx: From Novel Topological Semimetal to Majorana Wire

et al. 2016

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“…4 An alternative to forming InAs 1Àx Sb x layer-by-layer is to grow the material in the shape of nanowires, where epitaxial and dislocation-free materials with various As/Sb compositions can be formed on the same starting substrate. [5][6][7] Nanowires of binary InAs and InSb are currently studied very intensely in research related to quantum computation, motivated by the strong spin-orbit interaction in InAs and InSb, which simplifies spin manipulation, [8][9][10] and the observation of new quasiparticles, such as Majorana fermions. 11 Access to ternary InAs 1Àx Sb x material will likely offer a possibility to tune important material-related properties, such as spin-orbit coupling and quantum confinement.…”

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Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Thelander

Caroff

Plissard

et al. 2012

Applied Physics Letters

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Results of electrical characterization of Au nucleated InAs1−xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1−xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires.

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“…They suggested that under the same conditions, due to a decreased effective V/III ratio at the liquid solid interface, the incorporation of Sb in the NWs could be achieved to a significantly higher level than for planar epitaxy. Latter than the vapor phase epitaxy, InAs/InAs 1−x Sb x and their double heterostructures were successfully achieved via UHV CBE growth and the Sb content was increased to x = 0.94 [226] as shown in …”

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confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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Growth of InAs/InAsSb heterostructured nanowires

Cited by 50 publications

References 28 publications

Topological Phases inInAs1−xSbx: From Novel Topological Semimetal to Majorana Wire

Topological Phases inInAs1−xSbx: From Novel Topological Semimetal to Majorana Wire

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Growth of III-V semiconductor nanowires and their heterostructures

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