Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm

Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ ∼ 1.3 μm optical communications window

“…In order to overcome this problem either wafer-fusing onto GaAs/GaAlAs is employed, or some esoteric dielectric mirror pairs are used as reflectors. The former option has long term reliability issues while the latter necessitates the complex and expensive fabrication processes [5] [6].…”

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

“…The cut-off wavelength of active device based on type-I lattice matched active regions is limited to about 1.75 μm. By straining the active region, operation up to 2.3 μm can be obtained [87]. In recent years, high performance electrically pumped lasers using type-II InP-based heterostructures were reported, lasing in a wavelength range from 2.2 μm to 2.7 μm [88].…”

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

“…For the 2 µm wavelength range, GaSbbased type-I and InP-based type-II heterostructures can be used to design active devices. Around 2 µm wavelength also strained quantum wells on InP substrate can be used [9], but the maximum operating wavelength of this structure is limited to about 2.3 µm [10]. Adhesively bonded GaSb-based photodiodes on silicon photonic integrated circuits were demonstrated with a dark current of 1.13 µA at −0.1 V and a responsivity up to 1.4 A/W at 2.29 µm wavelength.…”