2005
DOI: 10.1016/j.tsf.2005.06.039
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Growth mechanism and thermoelectric properties of PbTe/SnTe/PbTe heterostructures

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Cited by 26 publications
(8 citation statements)
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“…As exemplified in the PbTe/PbSe(001) quantum dot system [8], the residual strain in their interface regime causes a dislocation pattern along [110] and [110] directions, inducing formation of quantum dots. Complementing this, a recent experimental study [9] on the effect of compressive strain on SnTe-supported PbTe thin films also demonstrated that dislocation patterns will begin to appear when the thin film thickness exceeds 20Å, which roughly corresponds to six to seven monolayers of PbTe. For those quantum dots systems, fine control of the size and distribution of the unit cell is one of the key elements to achieve next generation quantum devices.…”
Section: Introductionmentioning
confidence: 75%
See 1 more Smart Citation
“…As exemplified in the PbTe/PbSe(001) quantum dot system [8], the residual strain in their interface regime causes a dislocation pattern along [110] and [110] directions, inducing formation of quantum dots. Complementing this, a recent experimental study [9] on the effect of compressive strain on SnTe-supported PbTe thin films also demonstrated that dislocation patterns will begin to appear when the thin film thickness exceeds 20Å, which roughly corresponds to six to seven monolayers of PbTe. For those quantum dots systems, fine control of the size and distribution of the unit cell is one of the key elements to achieve next generation quantum devices.…”
Section: Introductionmentioning
confidence: 75%
“…An experimental study [9] was conducted to study the effect of compressive strain to a PbTe thin film on a SnTe substrate. They report that dislocation pattern began to appear as the thickness exceeded 20Å, which roughly corresponds to six or seven monolayers of SnTe.…”
Section: B Interface Thermodynamicsmentioning
confidence: 99%
“…The IV-VI compounds are promising candidate materials that can be utilized in thermoelectric, optoelectronic and the other applications [1][2][3][4]. Among them, the binary amorphous and crystalline SnTe and GeTe compounds have attracted numerous studies in the past decades [2,[5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…They are also used in ultrasonic amplification [149]. It has been used not only as bulk but also as films [185][186][187][188], quantum wells [189], superlattices [190,191], nanowires [192], and colloidal and embedded nanocrystals [193][194][195][196]. In Sect.…”
mentioning
confidence: 99%
“…PbTe, in particular, is the end compound of several ternary 1.2 Theoretical Background 7 and quaternary high-performance high-temperature thermoelectric materials [180][181][182][183][184]. It has been used not only as bulk but also as films [185][186][187][188], quantum wells [189], superlattices [190,191], nanowires [192], and colloidal and embedded nanocrystals [193][194][195][196]. PbTe films doped with various impurities have also been investigated [197][198][199][200].…”
mentioning
confidence: 99%